Panasonic 2SB0940A, 2SB0940 Datasheet
Po wer Transistors
10.0±0.2
5.5±0.2
7.5±0.2
16.7±0.3
0.7±0.1
14.0±0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.25
5.08±0.5
213
2.7±0.2
4.2±0.2
4.2±0.2
φ3.1±0.1
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264 and 2SD1264A
Features
■
●
High collector to emitter voltage V
●
Large collector power dissipation P
●
Full-pack package which can be installed to the heat sink with
one screw
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB940
2SB940A
2SB940
2SB940A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
V
V
I
I
P
T
T
CP
C
CBO
CEO
EBO
C
j
stg
CEO
C
=25˚C)
C
Ratings
–200
–200
–150
–180
150
–55 to +150
–6
–3
–2
30
2
Unit
V
V
V
A
A
W
˚C
˚C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*
h
Rank classification
FE1
Rank Q P
h
FE1
60 to 140 100 to 240
2SB940
2SB940A
C
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
*
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
=25˚C)
Conditions
VCB = –200V, IE = 0
VEB = –4V, IC = 0
IC = –50µA, IE = 0
IC = –5mA, IB = 0
IE = –500µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –400mA
VCE = –10V, IC = –400mA
IC = –500mA, IB = –50mA
VCE = –10V, IC = – 0.5A, f = 10MHz
min
–200
–150
–180
–6
60
50
typ30max
–50
–50
240
–1
–1
Unit
µA
µA
V
V
V
V
V
MHz
1
Po wer Transistors 2SB940, 2SB940A
PC—Ta IC—V
50
)
W
(
40
C
30
20
10
Collector power dissipation P
0
0 16040 12080 14020 10060
)
V
(
–10
CE(sat)
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01 –3–1– 0.1– 0.03 – 0.3
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(P
=2W)
C
(1)
(2)
(3)
(4)
Ambient temperature Ta (˚C
V
CE(sat)—IC
IC/IB=10
TC=100˚C
25˚C
–25˚C
Collector current IC (A
)
)
CE
–600
IB=–4.5mA
)
A
(
–500
–400
C
–300
–200
Collector current I
–100
0
0 –12–10–8–2 –6–4
Collector to emitter voltage VCE (V
hFE—I
C
10000
3000
FE
1000
TC=100˚C
300
25˚C
100
Forward current transfer ratio h
30
10
3
1
– 0.01
–25˚C
– 0.1 –1 –10
– 0.03
VCE=–10V
– 0.3 –3
Collector current IC (A
TC=25˚C
–4.0mA
–3.5mA
–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
– 0.5mA
)
–2.0
–1.6
)
A
(
C
–1.2
– 0.8
Collector current I
– 0.4
0
0 –1.0– 0.8– 0.2 – 0.6– 0.4
)
Base to emitter voltage VBE (V
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
3
1
– 0.01
IC—V
BE
V
TC=100˚C
fT —I
C
VCE=–10V
f=10MHz
T
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
CE
25˚C
=25˚C
C
=–10V
–25˚C
)
)
Area of safe operation (ASO) R
–100
–30
)
–10
A
(
C
I
CP
–3
I
C
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
5ms
Non repetitive pulse
=25˚C
T
C
t=0.5ms
1ms
DC
2SB940
Collector to emitter voltage VCE (V
2SB940A
)
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
–3
10
2
—t
th(t)
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
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