Panasonic 2SB0939, 2SB0939A Technical data

Power Transistors

2SB0939, 2SB0939A (2SB939, 2SB939A)

Silicon PNP epitaxial planar type Darlington

For midium-speed power switching

Complementary to 2SD1262 and 2SD1262A

■ Features

●High foward current transfer ratio hFE

●High-speed switching

●N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

■ Absolute Maximum Ratings (TC=25˚C)

Parameter		Symbol		Ratings	Unit
Collector to	2SB0939	VCBO		–60	V
base voltage	2SB0939A			–80
Collector to	2SB0939	VCEO		–60	V
emitter voltage	2SB0939A			–80
Emitter to base voltage		VEBO		–7	V
Peak collector current		ICP		–12	A
Collector current		IC		–8	A
Collector power	TC=25°C	PC		45	W
dissipation	Ta=25°C			1.3
Junction temperature		Tj		150	˚C
Storage temperature		Tstg		–55 to +150	˚C
■ Electrical Characteristics			(TC=25˚C)

		8.5±0.2		3.4±0.3	Unit: mm
		6.0±0.5			1.0±0.1
10.0±0.3	1.5±0.1
			1.5max.		1.1max.
10.5min.	2.0		0.8±0.1		0.5max.
			2.54±0.3
	5.08±0.5			1:Base
	1	2	3
				2:Collector
				3:Emitter
				N Type Package
					Unit: mm
		8.5±0.2		3.4±0.3
		6.0±0.3		1.0±0.1
±0.3
10.0			+0	+0.4	14.7±0.5
			1.5–0.4	3.0–0.2
4.4±0.5	2.0		0.8±0.1	R0.5	4.4±0.5
				R0.5
			2.54±0.3	0 to 0.4
				1.1 max.
	5.08±0.5
	1	2	3	1:Base
				2:Collector
				3:Emitter
				N Type Package (DS)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff

2SB0939

V

= –60V, I = 0

–100

ICBO

CB

E

A

current

2SB0939A

V

= –80V, I = 0

–100

CB

E

Emitter cutoff current

I

V

= –7V, I = 0

–2

mA

EBO

EB

C

Collector to emitter

2SB0939

V

I = –30mA, I = 0

–60

V

voltage

2SB0939A

CEO

C

B

–80

h

*

V

= –3V, I = –4A

2000

10000

Forward current transfer ratio

FE1

CE

C

h

V

= –3V, I = –8A

500

FE2

CE

C

Collector to emitter saturation voltage

V

I = –4A, I = –8mA

–1.5

V

CE(sat)

C

B

Base to emitter saturation voltage

V

I = –4A, I = –8mA

–2

V

BE(sat)

C

B

Transition frequency

f

V

= –10V, I = – 0.5A, f = 1MHz

15

MHz

T

CE

C

Turn-on time

ton

I = –4A, I = –8mA, I = 8mA,

0.5

s

Storage time

tstg

C

B1

B2

2

s

VCC

= –50V

Fall time

tf

1

s

*hFE1 Rank classification

Internal Connection

C

Rank

Q

P

B

hFE1

2000 to 5000

4000 to 10000

E

1

Power Transistor

2SB0939, 2SB0939A

PC — Ta

I

C — V

CE

VCE(sat) — I

C

50

–8

(V)

–100

IC/IB=500

(1)

(1) TC=Ta

TC=25˚C

(W)

(2) With a 50 × 50 × 2mm

–7

CE(sat)

Al heat sink

–30

40

(3) Without heat sink

IB=–2.0mA

C

(A)

V

(PC=1.3W)

–6

–1.8mA

Collector power dissipation P

–1.6mA

Collector to emitter saturation voltage

C

–1.4mA

–10

30

Collector current I

–5

–1.2mA

–1.0mA

–4

– 0.8mA

–3

25˚C

20

– 0.6mA

TC=100˚C

–3

–1

–25˚C

– 0.4mA

–2

10

– 0.2mA

– 0.3

(2)

–1

(3)

0

0

– 0.1

0

20

40

60

80

100 120

140

160

0

–1

–2

–3

–4

–5

– 0.1

– 0.3

–1

–3

–10

Ambient temperature

Ta

(˚C)

Collector to emitter voltage

VCE

(V)

Collector current

IC

(A)

VCE(sat) — I

C

VBE(sat) — I

C

VBE(sat) — I

C

(V)

–100

(1) IC/IB=250

(V)

–100

IC/IB=500

(V)

–100

(1) IC/IB=250

CE(sat)

(2) IC/IB=500

(2) IC/IB=500

–30

(3) IC/IB=1000

–30

–30

(3) IC/IB=1000

TC=25˚C

TC=25˚C

V

BE(sat)

BE(sat)

V

V

emittertoCollectorsaturation voltage

– 0.1

emittertoBasesaturation voltage

– 0.1

emittertoBasesaturation voltage

– 0.1

–10

(3)

–10

–10

–3

–3

T

C

=–25˚C

–3

(1)

25˚C

(2)

(2)

100˚C

(3)

–1

(1)

–1

–1

– 0.3

– 0.3

– 0.3

– 0.1 – 0.3

–1

–3

–10

– 0.1 – 0.3

–1

–3

–10

– 0.1 – 0.3

–1

–3

–10

FE

Forward current transfer ratio h

Collector current IC (A)

hFE — I C

105

VCE=–3V

TC=100˚C	25˚C
104
	–25˚C

103

102
– 0.1 – 0.3	–1	–3	–10

Collector current IC (A)

Collector current IC

(A)

Cob — V

CB

10000

(pF)

3000

IE=0

TC=25˚C

ob

f=1MHz

C

1000

capacitance

300

output

100

30

Collector

10

3

1

– 0.1 – 0.3 –1

–3

–10

–30 –100

Collector to base voltage VCB (V)

Collector current IC (A)

Area of safe operation (ASO)

–100 Non repetitive pulse

TC=25˚C

	–30
(A)	–10	ICP
				t=1ms
		IC
C
I	–3
current					10ms
	–1
Collector	– 0.3		300ms
	– 0.1
	– 0.03			2SB0939	2SB0939A
	– 0.01
	–1	–3	–10	–30	–100	–300 –1000
	Collector to emitter voltage					VCE	(V)

2