Panasonic 2SB0938, 2SB0938A Technical data

Power Transistors

2SB0938, 2SB0938A (2SB938, 2SB938A)

Silicon PNP epitaxial planar type Darlington

For power amplification and switching

Complementary to 2SD1261 and 2SD1261A

■ Features

●High foward current transfer ratio hFE

●High-speed switching

●N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

■ Absolute Maximum Ratings (TC=25˚C)

	Parameter		Symbol	Ratings	Unit
	Collector to	2SB0938	VCBO	–60	V
	base voltage	2SB0938A		–80
	Collector to	2SB0938	VCEO	–60	V
	emitter voltage	2SB0938A		–80
	Emitter to base voltage		VEBO	–5	V
	Peak collector current		ICP	–8	A
	Collector current		IC	–4	A
	Collector power	TC=25°C	PC	40	W
	dissipation	Ta=25°C		1.3
	Junction temperature		Tj	150	˚C
	Storage temperature		Tstg	–55 to +150	˚C

■ Electrical Characteristics (TC=25˚C)

		8.5±0.2		3.4±0.3	Unit: mm
		6.0±0.5			1.0±0.1
10.0±0.3	1.5±0.1
			1.5max.		1.1max.
10.5min.	2.0		0.8±0.1		0.5max.
			2.54±0.3
	5.08±0.5			1:Base
	1	2	3
				2:Collector
				3:Emitter
				N Type Package
		8.5±0.2			Unit: mm
				3.4±0.3
		6.0±0.3		1.0±0.1
±0.3			1.5–0.4	3.0–0.2	±14.70.5
10.0
			+0	+0.4
4.4±0.5	2.0		0.8±0.1	R0.5	4.4±0.5
				R0.5
			2.54±0.3	0 to 0.4
				1.1 max.
	5.08±0.5

1:Base

1 2 3

2:Collector 3:Emitter

N Type Package (DS)

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector cutoff

2SB0938

V

= –60V, I = 0

–200

ICBO

CB

E

A

current

2SB0938A

V

= –80V, I = 0

–200

CB

E

Collector cutoff

2SB0938

V

= –30V, I = 0

–500

ICEO

CE

B

A

current

2SB0938A

V

= –40V, I = 0

–500

CE

B

Emitter cutoff current

I

V

= –5V, I = 0

–2

mA

EBO

EB

C

Collector to emitter

2SB0938

V

I = –30mA, I = 0

–60

V

voltage

2SB0938A

CEO

C

B

–80

h

V

= –3V, I = – 0.5A

1000

Forward current transfer ratio

FE1

CE

C

h

*

V

= –3V, I = –3A

2000

10000

FE2

CE

C

Base to emitter voltage

V

V

= –3V, I = –3A

–2.5

V

BE

CE

C

I = –3A, I = –12mA

–2

Collector to emitter saturation voltage

VCE(sat)

C

B

V

I = –5A, I = –20mA

–4

C

B

Transition frequency

f

V

= –10V, I = – 0.5A, f = 1MHz

15

MHz

T

CE

C

Turn-on time

ton

0.3

s

Storage time

tstg

IC = –3A,B1I = –12mA,B2I = 12mA

2

s

Fall time

tf

0.5

s

*hFE2 Rank classification

C

Internal Connection

Rank

Q

P

B

hFE2

2000 to 5000

4000 to 10000

E

1

Power Transistor

2SB0938, 2SB0938A

PC — Ta

I C — V CE

IC — V BE

50

–6

TC=25˚C

–10

(W)

(1) TC=Ta

VCE=–3V

(2) With a 50 × 50 × 2mm

Al heat sink

–5

IB=–3.0mA

40

(3) Without heat sink

–8

C

(A)

–2.5mA

(A)

P

(1)

(PC=1.3W)

–2.0mA

Collector power dissipation

C

–4

–1.5mA

C

–1.0mA

Collector current I

Collector current I

25˚C

30

–6

– 0.5mA

–3

TC=100˚C

–25˚C

– 0.4mA

20

–4

–2

– 0.3mA

– 0.2mA

10

–1

–2

(2)

(3)

0

0

0

0

20 40 60 80 100

120

140

160

0

–1

–2

–3

–4

–5

0

– 0.8

–1.6

–2.4

–3.2

Ambient temperature

Ta

(˚C)

Collector to emitter voltage

VCE

(V)

Base to emitter voltage

VBE

(V)

VCE(sat) — I

C

hFE — I

C

Cob — V

CB

(V)

–100

IC/IB=250

106

VCE=–3V

10000

IE=0

(pF)

CE(sat)

–30

FE

3000

f=1MHz

TC=25˚C

h

V

–10

105

ob

1000

Collector output capacitance C

–3

TC=100˚C

300

25˚C

25˚C

TC=100˚C

–1

–25˚C

104

100

Collector to emittersaturationvoltage

– 0.3

Forwardtransfercurrentratio

–25˚C

30

– 0.1

103

10

– 0.03

3

– 0.01

102

1

– 0.01

– 0.03

– 0.1 – 0.3

–1

–3

–10

– 0.01

– 0.03

– 0.1 – 0.3

–1

–3

–10

– 0.1

– 0.3

–1

–3

–10

–30

–100

Collector current

IC

(A)

Collector current

IC

(A)

Collector to base voltage

VCB

(V)

Area of safe operation (ASO)

Rth(t) — t

–100

Non repetitive pulse

103

(1) Without heat sink

(2) With a 50 × 50 × 2mm Al heat sink

TC=25˚C

(˚C/W)

(A)

–30

(1)

102

ICP

–10

C

(t)

(2)

t=1ms

I

–3

IC

th

currentCollector

resistanceThermalR

10

2SB0938

2SB0938A

–1

10ms

– 0.3

300ms

1

– 0.1

10–1

– 0.03

– 0.01

10–2

–1

–3

–10

–30

–100

–300 –1000

10–4

10–3

10–2

10–1

1

10

102

103

104

Collector to emitter voltage

VCE

(V)

Time

t

(s)

2