Panasonic 2SB0937A, 2SB0937 Datasheet

Po wer Transistors

2SB937, 2SB937A

Silicon PNP epitaxial planar type Darlington

For power amplification and switching
Complementary to 2SD1260 and 2SD1260A

Features

■

●

High foward current transfer ratio h

●

High-speed switching

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SB937
2SB937A
2SB937

2SB937A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

2000 to 5000

Symbol

2SB937
2SB937A
2SB937
2SB937A

2SB937
2SB937A

4000 to 10000

V

V

V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

FE

=25˚C)

C

Ratings

–60
–80
–60
–80

–5
–4
–2
35

1.3

150

–55 to +150

=25˚C)

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

VCB = –60V, IE = 0
VCB = –80V, IE = 0
VCE = –30V, IB = 0
VCE = –40V, IB = 0
VEB = –5V, IC = 0

IC = –30mA, IB = 0

VCE = –4V, IC = –1A
VCE = –4V, IC = –2A
VCE = –4V, IC = –2A
IC = –2A, IB = –8mA
VCE = –10V, IC = – 0.5A, f = 1MHz

IC = –2A, IB1 = –8mA, IB2 = 8mA

Internal Connection

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

14.7±0.5

3.0

max

–1
–1
–2
–2
–2

4.4±0.5

0 to 0.4

Unit

mA

mA

mA

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

V

10.0±0.310.5min.

10.0±0.3

4.4±0.5

2.0 1.5±0.1

2.0

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

123

min

–60
–80

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

+0

typ

–0.4

1.5

1000
2000

C

B

E

20

0.4

1.5

0.5

10000

–2.8
–2.5

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SB937, 2SB937A

PC—Ta IC—V

50

)
W

(

40

C

(1)

30

20

10

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.01

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P

=1.3W)

C

(2)
(3)

V

CE(sat)—IC

TC=100˚C

–25˚C

25˚C

– 0.1 –1 –10

– 0.03

– 0.3 –3

Collector current IC (A

)

IC/IB=250

)

CE

–5

–4

)
A

(

C

–3

–2

Collector current I

–1

0

0–5–4–1 –3–2

TC=25˚C

IB=–2.0mA

Collector to emitter voltage VCE (V

hFE—I

C

5

10

FE

4

10

3

10

2

10

TC=100˚C

VCE=–4V

25˚C

–25˚C

Forward current transfer ratio h

10

– 0.01

– 0.1 –1 –10

– 0.03

– 0.3 –3

Collector current IC (A

–1.8mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA

– 0.6mA
– 4.0mA

– 0.2mA

– 0.1mA

)

IC—V

–10

–8

)
A

(

C

–6

TC=100˚C –25˚C

Base to emitter voltage VBE (V

Collector current I

)

–4

–2

0

0 –3.2– 0.8 –2.4–1.6

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector to base voltage VCB (V

BE

CB

25˚C

VCE=–4V

IE=0
f=1MHz
T

=25˚C

C

)

)

Area of safe operation (ASO) R

–100

–30

)

–10

A

(

I

CP

C

–3

I

C

–1

– 0.3

– 0.1

Collector current I

– 0.03

– 0.01

–1 –10 –100 –1000-3 –30 –300

Non repetitive pulse

=25˚C

T

C

t=1ms

300ms

10ms

2SB937

2SB937A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10