Panasonic 2SB0935A Datasheet
Po wer Transistors
2SB935, 2SB935A
Silicon PNP epitaxial planar type
For low-voltage switching
Features
■
●
Low collector to emitter saturation voltage V
●
High-speed switching
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB935
2SB935A
2SB935
2SB935A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
TC=25°C
Ta=25°C
Junction temperature
Storage temperature
Electrical Characteristics (T
■
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Symbol
2SB935
2SB935A
2SB935
2SB935A
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
–55 to +150
=25˚C)
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
CE(sat)
=25˚C)
C
Ratings
–40
–50
–20
–40
–5
–15
–10
35
1.3
150
VCB = –40V, IE = 0
VCB = –50V, IE = 0
VEB = –5V, IC = 0
IC = –10mA, IB = 0
VCE = –2V, IC = – 0.1A
VCE = –2V, IC = –2A
IC = –7A, IB = – 0.23A
IC = –7A, IB = – 0.23A
VCE = –10V, IC = – 0.5A, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
IC = –2A, IB1 = –66mA, IB2 = 66mA
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
10.0±0.310.5min.
2.0 1.5±0.1
10.0±0.3
2.0
4.4±0.5
8.5±0.2
6.0±0.5
2.54±0.3
5.08±0.5
213
8.5±0.2
6.0±0.3
2.54±0.3
5.08±0.5
123
min
–20
–40
45
90
1.5max.
0.8±0.1
0.8±0.1
1:Base
2:Collector
3:Emitter
N Type Package
–0.4
+0
1.5
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
typ
max
–50
–50
–50
260
– 0.6
–1.5
150
200
0.1
0.5
0.1
3.4±0.3
3.4±0.3
1.0±0.1
0 to 0.4
Unit: mm
1.0±0.1
1.1max.
0.5max.
Unit: mm
–0.2
+0.4
3.0
4.4±0.5
14.7±0.5
Unit
µA
µA
V
V
V
MHz
pF
µs
µs
µs
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
1
Po wer Transistors 2SB935, 2SB935A
PC—Ta IC—V
50
)
W
(
40
C
(1)
30
20
10
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–10
)
V
(
–3
BE(sat)
–1
– 0.3
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P
=1.3W)
C
V
BE(sat)—IC
TC=–25˚C
100˚C
25˚C
IC/IB=30
CE
)
–12
–10
)
A
(
–8
C
–6
–4
IB=–160mA
Collector current I
–2
0
0 –12–10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE—I
10000
3000
FE
1000
300
100
TC=100˚C
–25˚C
25˚C
TC=25˚C
–100mA
–80mA
–60mA
–40mA
–30mA
–20mA
–10mA
)
C
VCE=–2V
–10
V
(
–3
CE(sat)
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10– 0.3 –3
10000
3000
)
MHz
1000
(
T
300
100
V
CE(sat)—IC
IC/IB=30
TC=100˚C
25˚C
Collector current IC (A
fT—I
C
VCE=–10V
f=10MHz
T
=25˚C
C
–25˚C
)
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.1 –1 –10– 0.3 –3
10000
)
pF
3000
(
ob
1000
300
100
Collector current IC (A
Cob—V
30
10
3
CB
f=1MHz
=25˚C
T
C
)
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
30
10
Forward current transfer ratio h
3
1
– 0.1 –1 –10 –100– 0.3 –3 –30
C
=30
B1=IB2
=–20V
=25˚C
)
)
)
Collector current IC (A
ton, t
, tf — I
stg
10
)
3
µs
(
f
,t
1
stg
,t
on
0.3
0.1
Switching time t
0.03
0.01
0–8–2 –6–4 –7–1 –5–3
)
Collector current IC (A
Pulsed tw=1ms
Duty cycle=1%
I
C/IB
(–I
V
CC
T
C
t
stg
t
on
t
f
30
10
Transition frequency f
3
1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
Area of safe operation (ASO)
–100
–30
I
CP
)
–10
A
(
I
C
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
10ms
300ms
2SB935
)
t=1ms
2SB935A
)
2
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