Panasonic 2SB0934 Datasheet

Po wer Transistors
2SB934
Silicon PNP epitaxial planar type
For power switching Complementary to 2SD1257
Features
Low collector to emitter saturation voltage V
Satisfactory linearity of foward current transfer ratio h
Large collector current I
N type package enabling direct soldering of the radiating fin to
C
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
CE(sat)
=25˚C)
C
Ratings
–130
–80
–7
–15
–7 40
1.3
150
–55 to +150
FE
Unit
W
˚C ˚C
Unit: mm
8.5±0.2
6.0±0.5
10.0±0.310.5min.
1.5max.
2.0 1.5±0.1
V
0.8±0.1
2.54±0.3
5.08±0.5 213
8.5±0.2
6.0±0.3
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base 2:Collector 3:Emitter N Type Package
Unit: mm
3.4±0.3
1.0±0.1
V V A A
10.0±0.3
4.4±0.5
2.0
5.08±0.5
123
0.8±0.1
2.54±0.3
–0.4
+0
1.5
R0.5 R0.5
1.1 max.
1:Base 2:Collector 3:Emitter N Type Package (DS)
+0.4
0 to 0.4
–0.2
14.7±0.5
3.0
4.4±0.5
Electrical Characteristics (T
Parameter
Collector cutoff current Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
=25˚C)
Conditions
VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –5A, IB = – 0.25A IC = –5A, IB = – 0.25A VCE = –10V, IC = – 0.5A, f = 10MHz
IC = –3A, IB1 = – 0.3A, IB2 = 0.3A
min
–80
45 90
typ
30
0.5
1.5
0.1
max
–10 –50
260 – 0.5 –1.5
Unit
µA µA
V
V V
MHz
µs µs µs
1
Po wer Transistors 2SB934
PC—Ta IC—V
50
) W
(
40
C
(1)
30
20
10
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
–100
) V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
(1) TC=Ta (2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(P
=1.3W)
C
V
BE(sat)—IC
TC=–25˚C
100˚C
25˚C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
IC/IB=20
)
CE
)
–2.0
IB=–120mA
–1.6
) A
(
C
–1.2
– 0.8
Collector current I
– 0.4
0
0 –10–8–2 –6–4
)
Collector to emitter voltage VCE (V
–110mA
hFE—I
10000
3000
FE
1000
300
TC=100˚C
100
30
10
Forward current transfer ratio h
3
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
25˚C
–25˚C
–100mA
–90mA
–80mA
C
TC=25˚C
–70mA
–60mA
–40mA
–30mA
–20mA
–10mA
VCE=–2V
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
)
10000
3000
) MHz
1000
(
T
300
100
30
10
Transition frequency f
V
CE(sat)—IC
IC/IB=20
TC=100˚C
–25˚C
25˚C
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (A
fT—I
C
VCE=–10V f=10MHz T
=25˚C
C
3
1
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
)
Cob—I
10000
) pF
3000
(
ob
1000
300
100
30
10
3
Collector output capacitance C
1
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to base voltage VCB (V
2
ton, t
C
IE=0 f=1MHz
=25˚C
T
C
100
30
) µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01 0–8–2 –6–4
)
Collector current IC (A
, tf — I
stg
C
Pulsed tw=1ms Duty cycle=1%
=10
I
C/IB
)
(–I
B1=IB2
V
=–50V
CC
=25˚C
T
C
t
stg
t
on
t
f
)
Area of safe operation (ASO)
–100
–30
I
CP
)
–10
A
(
I
C
C
–3
10ms
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
Collector to emitter voltage VCE (V
Non repetitive pulse T
C
300ms
=25˚C
t=0.5ms
1ms
)
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