Panasonic 2SB0930A, 2SB0930 Datasheet

Po wer Transistors

2SB930, 2SB930A

Silicon PNP epitaxial planar type

For power amplification
Complementary to 2SD1253 and 2SD1253A

Features

■

●

High forward current transfer ratio hFE which has satisfactory linearity

●

Low collector to emitter saturation voltage V

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SB930
2SB930A
2SB930

2SB930A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Parameter

Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE1

Rank Q P

h

FE1

70 to 150 120 to 250

Symbol

2SB930
2SB930A
2SB930
2SB930A

2SB930
2SB930A

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

=25˚C)

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

*

h

FE1

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

CE(sat)

=25˚C)

C

Ratings

–60
–80
–60
–80

–5
–8
–4
40

1.3

150

–55 to +150

VCE = –60V, VBE = 0
VCE = –80V, VBE = 0
VCE = –30V, IB = 0
VCE = –60V, IB = 0
VEB = –5V, IC = 0

IC = –30mA, IB = 0

VCE = –4V, IC = –1A
VCE = –4V, IC = –3A
VCE = –4V, IC = –3A
IC = –4A, IB = – 0.4A
VCE = –10V, IC = – 0.1A, f = 1MHz

IC = –4A, IB1 = – 0.4A, IB2 = 0.4A

Unit

V

V

V
A
A

W

˚C
˚C

Conditions

10.0±0.310.5min.

10.0±0.3

2.0

4.4±0.5

2.0 1.5±0.1

123

8.5±0.2

6.0±0.5

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

min

–60
–80

70
15

1.5max.

0.8±0.1

2.54±0.3

0.8±0.1

2.54±0.3

–0.4

+0

1.5

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

typ

max

–400
–400
–700
–700

–1.5

20

0.2

0.5

0.2

Unit: mm

3.4±0.3

1.0±0.1

1.1max.

0.5max.

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

4.4±0.5

0 to 0.4

Unit

µA

µA

–1

mA

V

250

–2

V
V

MHz

µs
µs
µs

14.7±0.5

1

Po wer Transistors 2SB930, 2SB930A

PC—Ta IC—V

50

)

45

W

(

40

C

(1)

35

30

25

20

15

10

(2)

5

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.01

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P

=1.3W)

C

V

CE(sat)—IC

25˚C

TC=100˚C

–25˚C

– 0.1 –1 –10

– 0.03

– 0.3 –3

Collector current IC (A

)

IC/IB=10

)

CE

–6

–5

)
A

(

–4

C

–3

–2

IB=–120mA

–100mA

–80mA

Collector current I

–1

0

0 –12–10–8–2 –6–4

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

300

TC=100˚C

100

30

10

Forward current transfer ratio h

– 0.01

–25˚C

3

1

– 0.1 –1 –10

– 0.03

VCE=–4V

25˚C

– 0.3 –3

Collector current IC (A

TC=25˚C

–60mA

–40mA

–20mA
–10mA

–8mA
–5mA

)

–10

–8

)
A

(

C

–6

–4

Collector current I

–2

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

Base to emitter voltage VBE (V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

– 0.01

IC—V

BE

V

25˚C

TC=100˚C –25˚C

fT—I

C

VCE=–5V
f=1MHz
T

– 0.1 –1 –10

– 0.03

– 0.3 –3

Collector current IC (A

CE

=25˚C

C

=–4V

)

)

Area of safe operation (ASO) R

–100

–30

)

I

CP

–10

A

(

C

I

–3

C

–1

– 0.3

– 0.1

Collector current I

– 0.03

– 0.01

–1 –10 –100 –1000–3 –30 –300

10ms

300ms

Non repetitive pulse

=25˚C

T

C

t=1ms

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(
(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10