Panasonic 2SB0928A, 2SB0928 Datasheet
Po wer Transistors
2SB928, 2SB928A
Silicon PNP epitaxial planar type
For power amplification
For TV vartical deflection output
Complementary to 2SD1250 and 2SD1250A
Features
■
●
High collector to emitter V
●
High collector power dissipation P
●
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
■
Parameter
Collector to base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
2SB928
2SB928A
TC=25°C
Ta=25°C
CEO
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C
=25˚C)
C
Ratings
–200
–150
–180
–55 to +150
–6
–3
–2
30
1.3
150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.310.5min.
10.0±0.3
2.0
4.4±0.5
2.0 1.5±0.1
123
8.5±0.2
6.0±0.5
5.08±0.5
213
8.5±0.2
6.0±0.3
5.08±0.5
1.5max.
0.8±0.1
2.54±0.3
0.8±0.1
2.54±0.3
–0.4
+0
1.5
R0.5
R0.5
1.1 max.
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Unit: mm
3.4±0.3
1.0±0.1
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
–0.2
+0.4
3.0
4.4±0.5
0 to 0.4
14.7±0.5
Electrical Characteristics (T
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SB928
2SB928A
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*
h
Rank classification
FE1
C
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
*
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
=25˚C)
VCB = –200V, IE = 0
VEB = –4V, IC = 0
IC = –500µA, IE = 0
IC = –5mA, IB = 0
IE = –500µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –400mA
VCE = –10V, IC = –400mA
IC = –500mA, IB = –50mA
VCE = –10V, IC = – 0.5A, f = 10MHz
Rank Q P
h
FE1
60 to 140 100 to 240
Note: Ordering can be made by the common rank (PQ rank h
Conditions
= 60 to 240) in the rank classification.
FE1
min
–200
–150
–180
–6
60
50
typ30max
–50
–50
240
–1
–1
Unit
µA
µA
V
V
V
V
V
MHz
1
Po wer Transistors 2SB928, 2SB928A
PC—Ta IC—V
40
)
W
(
(1)
C
30
20
10
(2)
Collector power dissipation P
(3)
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
)
V
(
–10
CE(sat)
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01 –3–1– 0.1– 0.03 – 0.3
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
=1.3W)
(P
C
V
CE(sat)—IC
TC=100˚C
Collector current IC (A
)
IC/IB=10
25˚C
–25˚C
)
CE
–600
IB=–4.5mA
)
A
(
–500
–400
C
–300
–200
Collector current I
–100
0
0 –12–10–8–2 –6–4
Collector to emitter voltage VCE (V
hFE—I
C
10000
3000
FE
1000
TC=100˚C
300
25˚C
100
Forward current transfer ratio h
30
10
3
1
– 0.01
–25˚C
– 0.1 –1 –10
– 0.03
VCE=–10V
– 0.3 –3
Collector current IC (A
TC=25˚C
–4.0mA
–3.5mA
–3.0mA
–2.5mA
–2.0mA
–1.5mA
–1.0mA
– 0.5mA
)
–2.0
–1.6
)
A
(
C
–1.2
– 0.8
Collector current I
– 0.4
0
0 –1.0– 0.8– 0.2 – 0.6– 0.4
)
Base to emitter voltage VBE (V
10000
3000
)
MHz
1000
(
T
300
100
30
10
Transition frequency f
3
1
– 0.01
IC—V
BE
VCE=–10V
TC=100˚C
fT—I
C
VCE=–10V
f=10MHz
T
C
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
25˚C
–25˚C
)
=25˚C
)
Area of safe operation (ASO) R
3
10
)
2
10
˚C/W
(
(t)
th
10
1
–1
10
Thermal resistance R
–2
10
–4
10
)
–3
10
)
A
(
–10
C
– 0.3
– 0.1
I
CP
–3
I
C
–1
Non repetitive pulse
=25˚C
T
C
5ms
300ms
Collector current I
– 0.03
– 0.01
–1 –10 –100 –1000–3 –30 –300
2SB928
Collector to emitter voltage VCE (V
t=0.5ms
1ms
2SB928A
2
—t
th(t)
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
–1
–2
10
Time t (s
1010
110
10
)
3
2
4
10
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