Panasonic 2SB0873 Datasheet
Transistor
5.9±0.2
2.54±0.15
0.7±0.1
4.9±0.2
8.6±0.2
0.7
+0.3
–0.2
13.5±0.53.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
2SB873
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
For stroboscope
Features
■
●
Low collector to emitter saturation voltage V
●
Large collector current IC.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–55 ~ +150
–30
–20
–7
–10
–5
150
1
CE(sat)
Unit: mm
.
Unit
V
V
V
A
A
W
˚C
˚C
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
hFE Rank classification
Rank P Q R
h
FE
90 ~ 135 120 ~ 205 180 ~ 625
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
*1
h
FE
V
CE(sat)
f
T
C
ob
Conditions
VCB = –10V, IE = 0
VEB = –5V, IC = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –2A
IC = –3A, IB = –0.1A
*2
*2
VCB = –6V, IE = 50mA, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
min
–20
–7
90
typ
max
–100
–100
625
–1
120
85
*2
Pulse measurement
Unit
nA
nA
V
V
V
MHz
pF
1
Transistor
2SB873
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
Ta=75˚C
25˚C
– 0.1 –1 –10
– 0.3 –3
Collector current IC (A
)
C
IC/IB=30
–25˚C
)
CE
–6
IB=–40mA
–5
)
A
(
–4
C
–3
–2
–35mA
Collector current I
–1
0
0 –12–10–8–2 –6–4
Collector to emitter voltage VCE (V
hFE — I
C
600
Ta=75˚C
FE
500
0
– 0.01
25˚C
–25˚C
– 0.1 –1 –10
– 0.03
400
300
200
100
Forward current transfer ratio h
VCE=–2V
– 0.3 –3
Collector current IC (A
Ta=25˚C
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
–1mA
)
–12
–10
)
A
(
–8
C
–6
–4
Collector current I
–2
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
240
)
200
MHz
(
T
160
120
80
40
Transition frequency f
0
1 3 10 30 100
IC — V
BE
VCE=–2V
25˚C
Ta=75˚C
fT — I
–25˚C
E
VCB=–6V
Ta=25˚C
Emitter current IE (mA
)
)
Cob — V
200
)
180
pF
(
160
ob
140
120
100
80
60
40
20
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
Area of safe operation (ASO)
–100
–30
I
)
CP
–10
A
(
C
I
C
–3
–1
– 0.3
– 0.1
Collector current I
– 0.03
– 0.01
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector to emitter voltage VCE (V
t=1s
Single pulse
Ta=25˚C
t=10ms
)
Loading...