Panasonic 2SB0819 Datasheet
Transistor
2SB819
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD1051
Features
■
●
High collector to emitter voltage V
●
Large collector power dissipation PC.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
–50
–40
–5
–3
–1.5
1
150
Unit
V
V
V
A
A
W
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
Unit: mm
1.0
1.0
4.1±0.2 4.5±0.1
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
hFE Rank classification
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank Q R
h
FE
80 ~ 160 120 ~ 220
Conditions
VCB = –20V, IE = 0
VCE = –10V, IB = 0
VEB = –5V, IC = 0
IC = –1mA, IE = 0
IC = –2mA, IB = 0
*1
VCE = –5V, IC = –1A
IC = –1.5A, IB = –0.15A
IC = –2A, IB = –0.2A
*2
*2
*2
VCB = –5V, IE = 0.5A, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
min
–50
–40
80
typ
max
–1
–100
–10
220
–1
–1.5
150
45
*2
Pulse measurement
Unit
µA
µA
µA
V
V
V
V
MHz
pF
1
Transistor 2SB819
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
BE(sat)
25˚C
– 0.1 –1 –10
– 0.03
C
IC/IB=10
Ta=–25˚C
75˚C
– 0.3 –3
Collector current IC (A
)
V
CE
)
–4.0
–3.5
)
–3.0
A
(
C
–2.5
–2.0
–1.5
–1.0
Collector current I
– 0.5
0
0 –10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
400
300
Ta=75˚C
200
100
Forward current transfer ratio h
25˚C
–25˚C
0
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
– 0.3 –3
Ta=25˚C
IB=–40mA
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
C
VCE=–5V
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
)
Collector current IC (A
240
)
200
MHz
(
T
160
120
80
40
Transition frequency f
0
10 100 1000 1000030 300 3000
Emitter current IE (mA
— I
CE(sat)
– 0.1 –1 –10
C
IC/IB=10
Ta=75˚C
25˚C
–25˚C
– 0.3 –3
)
fT — I
E
VCB=–5V
Ta=25˚C
)
)
pF
(
Cob — V
150
120
ob
90
60
30
CB
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
–60
)
V
(
–50
CER
–40
–30
–20
–10
Collector to emitter voltage V
0
0.001 0.01 0.1 1 10
)
Base to emitter resistance RBE (kΩ
V
CER
— R
BE
Ta=25˚C
1000
300
)
100
)
Ta
(
30
Ta=25˚C
(
CEO
I
CEO
10
I
3
1
)
I
— Ta
CEO
VCE=–12V
0 1201008020 6040
Ambient temperature Ta (˚C
)
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