Panasonic 2SB0792A User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SB0792A

Silicon PNP epitaxial planar type

For high breakdown voltage low-noise amplification

 Features

 High collector-emitter voltage (Base open) V
 Low noise voltage NV
 Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing.

CEO

 Absolute Maximum Ratings Ta = 25°C

 Package

Code

Mini3-G1

Pin Name

1. Base

2. Emitter

3. Collector

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

–185 V

–185 V

–5 V

–50 mA

–100 mA

200 mW

150

–55 to +150

°C

°C

 Marking Symbol: 2F

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Noise voltage

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank R S

h

FE

Merking symbol 2FR 2FS

130 to 220 185 to 330

CEOIC

EBOIE

I

CBO

h

FE

CE(sat)IC

T

C

ob

NV

= –100 mA, IB = 0 –185 V

= –10 mA, IC = 0 –5 V

VCB = –100 V, IE = 0 –1

VCE = –5 V, IC = –10 mA 130 330

= –30 mA, IB = –3 mA –1 V

VCB = –10 V, IE = 10 mA, f = 200 MHz 200 MHz

VCB = –10 V, IE = 0, f = 1 MHz 4 pF

VCB = –10 V, IC = –1 mA, GV = 80 dB,

Rg = 100 kΩ, Function = FLAT

150 mV

mA



Publication date : October 2008 SJC00417AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

2SB0792A_PC-T

a

0 16040 12080

0

240

200

160

120

80

40

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C

)

2SB0792A_IC-V

CE

0 −12−10−8−2 −6−4

0

−100

−80

−60

−40

−20

Ta = 25°C

−2 mA

−1 mA

−3 mA

−4 mA

−5 mA

−6 mA

−7 mA

−8 mA

−9 mA

IB = −10 mA

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

2SB0792A_V

CE(sat)-IC

− 0.1 −1 −10 −100

− 0.01

− 0.1

−1

−10

−100

IC / IB = 10

Ta = 75°C

25°C

−25°C

Collector-emitter saturation voltage V

CE(sat)

(

V

)

Collector current IC (mA

)

2SB0792A_hFE-I

C

− 0.1 −1 −10 −100

0

600

500

400

300

200

100

VCE = −5 V

Ta = 75°C

25°C

−25°C

Forward current transfer ratio率 h

FE

Collector current IC (mA

)

2SB0792A_fT-I

E

0.1 1 10 100

0

250

200

150

100

50

VCB = −10 V
Ta = 25°C

Transition frequency f

T

(

MHz

)

Emitter current IE (mA

)

2SB0792A_Cob-V

CB

−1 −10 −100

0

10

8

6

4

2

IE = 0
f = 1 MHz
Ta = 25°C

Collector-base voltage VCB (V

)

Collector output capacitance

(Common base, input open circuited)

C

ob

(pF)

2SB0792_IC-V

BE

0 −2.0−1.6− 0.4 −1.2− 0.8

0

−120

−100

−80

−60

−40

−20

VCE = −5 V

Ta = 75°C

−25°C

25°C

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V

)

2SB0792A

PC  Ta IC  VCE IC  V

V

 IC hFE  I

CE(sat)

C

fT  I

BE

E

Cob  V

2 SJC00417AED

CB