Panasonic 2SB0790 Datasheet
Transistor
2SB790
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD969
Features
■
●
Low collector to emitter saturation voltage V
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*1
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Ratings
–25
–20
–7
–1
– 0.5
600
150
–55 ~ +150
.
CE(sat)
VCB = –25V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IC = –10µA, IC = 0
VCE = –2V, IC = –0.5A
VCE = –2V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
Unit
V
V
V
A
A
mW
˚C
˚C
Conditions
*2
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
min
–25
–20
–7
*2
90
25
*2
*2
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
typ
max
–100
–1
220
– 0.4
–1.2
150
15
25
*2
Pulse measurement
Unit: mm
1.0
1.0
4.1±0.2 4.5±0.1
Unit
nA
µA
V
V
V
V
V
MHz
pF
*1
h
Rank classification
FE1
Rank Q R
h
FE1
90 ~ 155 130 ~ 220
1
Transistor
2SB790
PC — Ta IC — V
800
)
700
mW
(
C
600
500
400
300
200
100
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
BE(sat)
–100
)
V
(
–30
BE(sat)
–10
–3
25˚C
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
C
IC/IB=10
Ta=–25˚C
75˚C
– 0.3 –3
)
V
CE
)
–1.2
–1.0
)
mA
(
– 0.8
C
– 0.6
– 0.4
Collector current I
– 0.2
0
0–6–5–4–1 –3–2
)
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
400
300
Ta=75˚C
25˚C
200
–25˚C
100
Forward current transfer ratio h
0
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
C
VCE=–2V
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
)
Collector current IC (mA
320
280
)
MHz
240
(
T
200
160
120
80
Transition frequency f
40
0
0.1 1 10 1000.3 3 30
Emitter current IE (mA
— I
CE(sat)
Ta=75˚C
25˚C
– 0.1 –1 –10
C
IC/IB=10
–25˚C
– 0.3 –3
)
fT — I
E
VCB=–10V
Ta=25˚C
)
Cob — V
80
)
pF
70
(
ob
60
50
40
30
20
10
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
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