Panasonic 2SB0789A, 2SB0789 Datasheet
Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SD968 and 2SD968A
Features
■
●
High collector to emitter voltage V
●
Large collector power dissipation PC.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB789
2SB789A
2SB789
2SB789A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
.
CEO
Ratings
–100
–120
–100
–120
–55 ~ +150
–5
–1
–0.5
1
150
Unit
V
V
V
A
A
W
˚C
˚C
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
Marking symbol : D
(2SB789)
(2SB789A)
E
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
+0.1
Unit: mm
2.5±0.1
0.4±0.04
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector to emitter
voltage
2SB789
2SB789A
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
Rank classification
FE1
Symbol
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
Cob
Rank Q R
Marking
Symbol
h
FE1
2SB789 DQ DR
2SB789A EQ ER
90 ~ 155 130 ~ 220
Conditions
IC = –100µA, IB = 0
IE = –10µA, IC = 0
*
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–100
–120
–5
90
50
typ
– 0.2
– 0.85
120
max
220
– 0.6
–1.2
30
Unit
V
V
V
V
MHz
pF
1
Transistor 2SB789, 2SB789A
PC — Ta IC — V
1.4
)
W
1.2
(
C
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
CE(sat)
– 0.1 –1 –10
– 0.03
C
Ta=75˚C
25˚C
–25˚C
– 0.3 –3
IC/IB=10
Collector current IC (A
)
)
CE
)
(
A
– 0.8
C
– 0.6
– 0.4
–1.2
–1.0
–16mA
–14mA
–18mA
Ta=25˚C
IB=–20mA
–12mA
–10mA
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
Collector current I
– 0.2
0
0 –12–10–8–2 –6–4
Collector to emitter voltage VCE (V
V
— I
BE(sat)
–100
)
V
(
–30
BE(sat)
–10
–3
25˚C
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
– 0.1 –1 –10
– 0.03
C
IC/IB=10
Ta=–25˚C
75˚C
– 0.3 –3
Collector current IC (A
IC — I
B
)
A
(
–1.2
–1.0
– 0.8
C
– 0.6
– 0.4
VCE=–10V
Ta=25˚C
Collector current I
– 0.2
0
0 –15–9–3 –6 –12
)
Base current IB (mA
hFE — I
600
FE
500
400
300
Ta=75˚C
200
100
Forward current transfer ratio h
)
25˚C
–25˚C
0
– 0.01
– 0.1 –1 –10
– 0.03
– 0.3 –3
Collector current IC (A
)
C
VCE=–10V
)
fT — I
200
180
)
160
MHz
(
140
T
120
100
80
60
40
Transition frequency f
20
0
1 3 10 30 100
Emitter current IE (mA
2
E
VCB=–10V
Ta=25˚C
)
Cob — V
50
)
45
pF
(
40
ob
35
30
25
20
15
10
5
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
IE=0
f=1MHz
Ta=25˚C
)
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