Panasonic 2SB0788 Datasheet
Transistor
2SB788
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD958
Features
■
●
High collector to emitter voltage V
●
Low noise voltage NV.
●
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–120
–120
–55 ~ +150
–7
–50
–20
400
150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
0.4
R0.9
R0.7
1.0±0.1
0.85
0.55±0.1 0.45±0.05
2.5 2.5
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
2.5±0.1
3.5±0.1
2.0±0.2
2.4±0.21.25±0.05
123
Unit: mm
1.0
1.0
4.1±0.2 4.5±0.1
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
*
hFE Rank classification
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
NV
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
Conditions
VCB = –50V, IE = 0
VCE = –50V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
*
VCE = –5V, IC = –2mA
IC = –20mA, IB = –2mA
VCB = –5V, IE = 2mA, f = 200MHz
VCE = 40V, IC = –1mA, GV = 80dB,
Rg = 100kΩ, Function = FLAT
min
–120
–120
–7
180
typ
150
max
–100
–1
700
– 0.6
150
Unit
nA
µA
V
V
V
V
MHz
mV
1
Transistor 2SB788
PC — Ta IC — V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (mA
VCE=–5V
Ta=75˚C
25˚C
–25˚C
V
BE
)
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
25˚C
Ta=75˚C
fT — I
320
280
)
MHz
240
(
T
200
160
120
80
Transition frequency f
40
0
0.1 1 10 1000.3 3 30
)
Emitter current IE (mA
–25˚C
E
VCE=–5V
VCB=–10V
Ta=25˚C
)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
Collector current IC (mA
5
)
pF
(
4
ob
3
2
1
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
— I
CE(sat)
25˚C
–25˚C
Cob — V
C
Ta=75˚C
CB
IC/IB=10
)
IE=0
f=1MHz
Ta=25˚C
)
NV — I
C
)
mV
(
120
100
80
60
40
VCE=–10V
G
=80dB
V
Function=FLAT
Rg=100kΩ
22kΩ
Noise voltage NV
20
0
– 0.01 – 0.03 – 0.1 – 0.3 –1
Collector current IC (mA
2
4.7kΩ
)
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