Panasonic 2SB0779 Datasheet
Transistor
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
2SB779
Silicon PNP epitaxial planer type
For low-frequency output amplification
Features
■
●
Low collector to emitter saturation voltage V
●
Satisfactory linearity of hFE at the low collector voltage.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–25
–20
–7
–1
– 0.5
200
150
–55 ~ +150
CE(sat)
.
Unit
V
V
V
A
A
mW
˚C
˚C
Unit: mm
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Marking symbol : 1A
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
Rank classification
FE1
Marking Symbol 1AQ 1AR
Rank Q R
h
FE1
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*1
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
90 ~ 155 130 ~ 220
Conditions
VCB = –25V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –0.5A
VCE = –2V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
*2
*2
*2
*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–25
–20
–7
90
25
typ
– 0.2
150
15
*2
Pulse measurement
max
–100
–1
220
– 0.4
–1.2
Unit
nA
µA
V
V
V
V
V
MHz
pF
1
Transistor
2SB779
PC — Ta V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
hFE — I
C
600
FE
500
400
300
Ta=75˚C
25˚C
200
–25˚C
100
Forward current transfer ratio h
0
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
VCE=–2V
– 0.3 –3
— I
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
)
Ta=75˚C
25˚C
– 0.1 –1 –10
– 0.03
Collector current IC (A
fT — I
400
360
)
320
MHz
(
280
T
240
200
160
120
80
Transition frequency f
40
0
0.1 1 10 1000.3 3 30
CE(sat)
)
Emitter current IE (mA
C
–25˚C
– 0.3 –3
E
VCB=–10V
Ta=25˚C
IC/IB=10
)
)
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
60
)
pF
(
50
ob
40
30
20
10
Collector output capacitance C
V
— I
BE(sat)
25˚C
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
Cob — V
0
–1 –3 –10 –30 –100
C
Ta=–25˚C
75˚C
– 0.3 –3
CB
IE=0
f=1MHz
Ta=25˚C
IC/IB=10
)
Collector to base voltage VCB (V
)
2
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