Panasonic 2SB0774 Datasheet
Transistor
2SB774
Silicon PNP epitaxial planer type
For low-frequency amplification
Features
■
●
High emitter to base voltage V
●
Protective diodes and resistances between emitter and base can
be omitted.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
.
EBO
Ratings
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
–30
–25
–15
–200
–100
400
150
–55 ~ +150
Symbol
I
I
V
V
V
h
h
V
f
C
CBO
CEO
T
CBO
CEO
EBO
FE1
FE2
CE(sat)
ob
*
VCB = –10V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
VCE = –2V, IC = –100mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 2mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
Unit
V
V
V
mA
mA
mW
˚C
˚C
Conditions
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
min
typ
–30
–25
–15
210
90
150
Unit: mm
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
max
–100
Unit
–1
µA
µA
V
V
V
460
–0.5
V
MHz
4
pF
*
h
Rank classification
FE1
Rank R S
h
FE1
210 ~ 340 290 ~ 460
1
Transistor
2SB774
PC — Ta IC — V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
Ta=75˚C
Collector current IC (mA
)
C
IC/IB=10
–25˚C
)
CE
–240
Ta=25˚C
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–10–8–2 –6–4
IB=–1.8mA
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
Ta=75˚C
–25˚C
VCE=–10V
25˚C
Collector current IC (mA
–1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
– 0.4mA
– 0.2mA
)
–200
–180
–160
)
mA
(
–140
C
–120
–100
–80
–60
Collector current I
–40
–20
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
1000
)
MHz
300
(
T
100
30
Transition frequency f
10
0.1 1 10 1000.3 3 30
IC — V
BE
VCE=–10V
25˚C
Ta=75˚C
–25˚C
fT — I
E
VCB=–10V
Ta=25˚C
Emitter current IE (mA
)
)
)
pF
(
Cob — V
12
10
ob
8
6
4
2
CB
Collector output capacitance C
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
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