Panasonic 2SB0766A, 2SB0766 Datasheet
Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD874 and 2SD874A
Features
■
●
Large collector power dissipation PC.
●
Mini Power type package, allowing do wnsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SB766
2SB766A
2SB766
2SB766A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Rank Q R S
h
FE1
Marking
Symbol
2SB766 AQ AR AS
2SB766A BQ BR BS
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
*
P
C
T
j
T
stg
Ratings
–30
–60
–25
–50
–5
–1.5
–1
1
150
–55 ~ +150
Symbol
I
CBO
2SB766
2SB766A
2SB766
2SB766A
V
V
V
h
FE1
h
FE2
V
V
f
T
C
CBO
CEO
EBO
*1
CE(sat)
BE(sat)
ob
85 ~ 170 120 ~ 240 170 ~ 340
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
Unit
V
V
V
A
A
W
˚C
˚C
Conditions
*2
4.5±0.1
1.6±0.2
2.6±0.1
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
Marking symbol : A
min
marking
B
typ
+0.1
(2SB766)
(2SB766A)
–30
–60
–25
–50
–5
*2
85
50
*2
*2
– 0.2
– 0.85
200
20
*2
Unit: mm
1.5±0.1
–0.20
+0.25
0.4max.1.0
4.0
–0.2
max
– 0.1
2.5±0.1
0.4±0.04
Unit
µA
V
V
V
340
– 0.4
–1.2
V
V
MHz
30
pF
Pulse measurement
1
Transistor
2SB766, 2SB766A
PC — Ta IC — V
1.4
)
W
1.2
(
C
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
0
–100
)
V
(
–30
BE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
Base to emitter saturation voltage V
– 0.01
– 0.01
Printed circut board: Copper
foil area of 1cm
the board thickness of 1.7mm
for the collector portion.
0 16040 12080 14020 10060
2
or more, and
Ambient temperature Ta (˚C
V
— I
BE(sat)
25˚C
– 0.1 –1 –10
– 0.03
C
IC/IB=10
Ta=–25˚C
75˚C
– 0.3 –3
Collector current IC (A
)
V
CE
–1.50
–1.25
)
A
(
–1.00
C
– 0.75
– 0.50
Collector current I
– 0.25
0
0 –10–8–2 –6–4
)
Collector to emitter voltage VCE (V
hFE — I
600
FE
500
400
Ta=75˚C
300
200
100
Forward current transfer ratio h
25˚C
–25˚C
0
– 0.01
– 0.1 –1 –10
– 0.03
Collector current IC (A
– 0.3 –3
C
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
VCE=–10V
)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.01
– 0.03
)
)
MHz
(
T
Transition frequency f
Collector current IC (A
200
VCB=–10V
Ta=25˚C
180
160
140
120
100
80
60
40
20
0
1 3 10 30 100
Emitter current IE (mA
— I
CE(sat)
– 0.1 –1 –10
C
IC/IB=10
Ta=75˚C
25˚C
–25˚C
– 0.3 –3
)
fT — I
E
)
Cob — V
50
)
45
pF
(
40
ob
35
30
25
20
15
10
5
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
Area of safe operation (ASO)
–10
–3
I
CP
)
–1
A
(
I
C
C
– 0.3
– 0.1
– 0.03
– 0.01
Collector current I
– 0.003
– 0.001
– 0.01
– 0.1 –1 –10
– 0.03
Collector to emitter voltage VCE (V
Single pulse
Ta=25˚C
t=1s
– 0.3 –3
t=10ms
2SB766
2SB766A
)
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