Panasonic 2SB0745A, 2SB0745 Datasheet

Transistor

2SB745, 2SB745A

Silicon PNP epitaxial planer type

For low-frequency and low-noise amplification
Complementary to 2SD661 and 2SD661A

Unit: mm

Features

■

●

Low noise voltage NV.

●

High foward current transfer ratio hFE.

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SB745
2SB745A
2SB745

2SB745A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

–35
–55
–35
–55

–5

–200

–50
400
150

–55 ~ +150

Unit

V

V

V
mA
mA

mW

˚C
˚C

6.9±0.1

1.5

0.4

1.0±0.1

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

1.5 R0.9

R0.9

R0.7

0.85

0.55±0.1 0.45±0.05

2.5 2.5

2.5±0.1

1.0

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

1.0

4.1±0.2 4.5±0.1

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base
voltage
Collector to emitter
voltage

2SB745
2SB745A
2SB745

2SB745A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency

Noise voltage

*

hFE Rank classification

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

V

BE

f

T

NV

Rank R S T

h

FE

180 ~ 360 260 ~ 520 360 ~ 700

Conditions

VCB = –10V, IE = 0
VCE = –10V, IB = 0

min

typ

max

–100

–1

Unit

nA
µA

–35

IC = –10µA, IE = 0

V

–55
–35

IC = –2mA, IB = 0

V

–55

IE = –10µA, IC = 0

*

VCB = –5V, IE = 2mA
IC = –100mA, IB = –10mA
VCE = –1V, IC = –100mA
VCB = –5V, IE = 2mA, f = 200MHz

–5

180

– 0.7

150

700

– 0.6

–1

V

V
V

MHz

VCE = –10V, IC = –1mA, GV = 80dB

150

mV

Rg = 100kΩ, Function = FLAT

1

Transistor 2SB745, 2SB745A

PC — Ta IC — V

500

)

450

mW

(

400

C

350

300

250

200

150

100

50

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

–800

–700

–600

)
µA

(

–500

B

–400

IB — V

BE

VCE=–5V
Ta=25˚C

CE

–160

–140

)

–120

mA

(

C

–100

–80

–60

–40

Collector current I

–20

0

0 –12–10–8–2 –6–4

)

Collector to emitter voltage VCE (V

IC — V

–120

–100

)
mA

(

C

–80

–60

Ta=75˚C

25˚C

–25˚C

Ta=25˚C

IB=–350µA

–300µA

–250µA

–200µA

–150µA

–100µA

–50µA

BE

VCE=–5V

–160

–140

)

–120

mA

(

C

–100

–80

–60

–40

Collector current I

–20

)

)

–100

V

(

–30

CE(sat)

–10

0

0– 0.5– 0.4– 0.1 – 0.3– 0.2

–3

–1

IC — I

B

VCE=–5V
Ta=25˚C

Base current IB (mA

V

— I

CE(sat)

C

)

IC/IB=10

–300

Base current I

–200

–100

0

0 –1.0– 0.8– 0.2 – 0.6– 0.4

Base to emitter voltage VBE (V

hFE — I

600

FE

500

Ta=75˚C

400

300

200

100

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

25˚C

–25˚C

C

VCE=–5V

Collector current IC (mA

–40

Collector current I

–20

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

)

Base to emitter voltage VBE (V

fT — I

E

500

450

)

400

MHz

(

350

T

300

250

200

150

100

Transition frequency f

50

0

0.1 1 10 1000.3 3 30

Emitter current IE (mA

VCB=–5V
Ta=25˚C

)

)

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.1 – 1 –10 –100– 0.3 –3 –30

Collector current IC (mA

Cob — V

20

)

18

pF

(

16

ob

14

12

10

8

6

4

2

Collector output capacitance C

0

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector to base voltage VCB (V

25˚C

CB

Ta=75˚C

–25˚C

IE=0
f=1MHz
Ta=25˚C

)

)

2