Panasonic 2SB0726 Datasheet
Transistor
2SB726
Silicon PNP epitaxial planer type
For general amplification
Features
■
●
High foward current transfer ratio hFE.
●
High collector to emitter voltage V
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Symbol
V
V
V
I
P
T
T
C
CBO
CEO
EBO
C
j
stg
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
*
h
FE
V
CE(sat)
V
BE
f
T
CEO
.
Ratings
–80
–80
–5
–100
250
150
–55 ~ +150
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCB = –5V, IE = –2mA
IC = –20mA, IB = –2mA
VCE = –1V, IC = –100mA
VCB = –5V, IE = 2mA, f = 200MHz
Unit
V
V
V
mA
mW
˚C
˚C
Conditions
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
min
typ
–80
–80
–5
180
–1
150
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
max
–100
–1
700
– 0.6
–1.2
Unit: mm
Unit
nA
µA
V
V
V
V
V
MHz
*
hFE Rank classification
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
1
Transistor 2SB726
PC — Ta IC — V
500
)
450
mW
(
400
C
350
300
250
200
150
100
50
Collector power dissipation P
0
0 20016040 12080
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
–100
V
(
–30
CE(sat)
–10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Collector to emitter saturation voltage V
– 0.1 –1 –10 –100– 0.3 –3 –30
25˚C
–25˚C
Collector current IC (mA
)
C
IC/IB=10
Ta=75˚C
)
CE
–80
–70
)
–60
mA
(
C
–50
–40
–30
–20
Collector current I
–10
0
0 –12–10–8–2 –6–4
IB=–200µA
Collector to emitter voltage VCE (V
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
– 0.1 –1 –10 –100– 0.3 –3 –30
VCE=–5V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
Ta=25˚C
–180µA
–180µA
–140µA
–120µA
–100µA
–80µA
–60µA
–40µA
–20µA
)
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
0
0 –2.0–1.6– 0.4 –1.2– 0.8
)
Base to emitter voltage VBE (V
240
)
200
MHz
(
T
160
120
80
40
Transition frequency f
0
1 3 10 30 100
IC — V
BE
VCE=–5V
25˚C
Ta=75˚C
–25˚C
fT — I
E
VCB=–5V
Ta=25˚C
Emitter current IE (mA
)
)
Cob — V
10
)
9
pF
(
8
ob
7
6
5
4
3
2
1
Collector output capacitance C
0
–1 –3 –10 –30 –100
CB
Collector to base voltage VCB (V
2
IE=0
f=1MHz
Ta=25˚C
)
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