Panasonic 2SB0710A User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SB0710A

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SD0602A

 Features

 Large collector current I
 Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing

C

 Package

Code

Mini3-G1
Pin Name

1: Base

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

-60

-50

-5

- 0.5

-1

200 mW

150

-55 to +150

V

V

V

A

A

°C

°C

2: Emitter

3: Collector

 Marking Symbol: D

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open) I

1

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

*

1

*

1

*

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurement

*2: Rank classification

Product of no-rank is not classified and have no indication for rank.

Rank Q R S No-rank

h

FE1

Marking symbol DQ DR DS D

85 to 170 120 to 240 170 to 340 85 to 340

CBOIC

CEOIC

EBOIE

CBO

h

FE1

h

FE2

V

CE(sat)IC

V

BE(sat)IC

T

C

ob

= -10 mA, IE = 0

= -10 mA, IB = 0

= -10 mA, IC = 0

-60

-50

-5

VCB = -20 V, IE = 0

2

*

VCE = -10 V, IC = -150 mA 85 340

VCE = -10 V, IC = -500 mA 40

= -300 mA, IB = -30 mA

= -300 mA, IB = -30 mA

- 0.35 - 0.60

-1.1 -1.5

VCB = -10 V, IE = 50 mA, f = 200 MHz 200 MHz

VCB = -10 V, IE = 0, f = 1 MHz 6 15 pF

V

V

V

- 0.1 mA





V

V

Publication date: October 2008 SJC00413AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0

40

80

120 160

0

80

160

240

2SB0710A_ PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C)

0

−4 −8 −12

0

−200

−400

−600

−800

2SB0710A_ IC-V

CE

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V)

Ta = 25°C

IB = −10 mA

−9 mA

−8 mA

−7 mA

−6 mA

−5 mA

−4 mA

−3 mA

−2 mA

−1 mA

0

−8−4

0

−200

−600

−800

−400

2SB0710A_ IC-I

B

Collector current I

C

(

mA

)

Base current IB (mA)

V

CE

= −10 V

Ta = 25°C

−1 −10 −10

2

−10

3

−10

−2

−10

−1

−10

−1

2SB0710A_ V

CE(sat)-IC

Collector-emitter saturation voltage V

CE(sat)

(

V

)

Collector current IC (mA)

IC / IB = 10

Ta = 75°C

25°C

−25°C

−1 −10 −10

2

−10

3

−10

−2

−10

−1

−10

−1

2SB0710A_ V

BE(sat)-IC

Base-emitter saturation voltage V

BE(sat)

(

V

)

Collector current IC (mA)

IC / IB = 10

Ta = −25°C

25°C

75°C

−10

−10

2

−10

3

0

100

200

300

400

2SB0710A_ hFE-I

C

Forward current transfer ratio h

FE

Collector current IC (mA)

V

CE

= −10 V

Ta = 75°C

25°C

−25°C

1

10 10

2

0

80

160

240

2SB0710A_ fT-I

E

Transition frequency f

T

(MHz)

Emitter current IE (mA)

V

CE

= −10 V

Ta = 25°C

−1

−10 −10

2

0

8

16

24

2SB0710A_ Cob-V

CB

Collector output capacitance

(Common base, input open circuited) C

ob

(pF)

Collector-base voltage VCB (V)

IE = 0
f = 1 MHz
Ta = 25°C

1

10 10

3

10

2

0

−40

−80

−120

2SB0710A_ V

CER-RBE

Collector-emitter voltage

(Resistor between B and E) V

CER

(V)

Base-emitter resistance RBE (kΩ)

IC = −2 mA
Ta = 25°C

2SB0710A

PC  Ta IC  VCE IC  I

V

 IC V

CE(sat)

 IC hFE  I

BE(sat)

B

C

fT  IE Cob  VCB V

2 SJC00413AED

 R

CER

BE