Panasonic 2SB0710A, 2SB0710 Datasheet

Transistors

2SB0710, 2SB0710A

Silicon PNP epitaxial planer type

For general amplification

Complementary to 2SD0602 and 2SD0602A

■ Features

• Large collector current I

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine
packing.

C

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector to
base voltage

Collector to
emitter voltage

2SB0710 V
2SB0710A −60
2SB0710 V

2SB0710A −50
Emitter to base voltage V
Peak collector current I
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T

CBO

CEO

EBO

CP

C

C

j

stg

−30 V

−25 V

−5V

−1A

−500 mA

200 mW
150 °C

−55 to +150 °C

+0.10

0.40

–0.05

3

2

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

10°

1: Base JEDEC: TO-236
2: Emitter EIAJ: SC-59
3: Collector Mini Type Package

Marking Symbol

• 2SB0710 : C

• 2SB0710A : D

+0.25

–0.05

1.50

(0.65)

+0.2

–0.1

1.1

0 to 0.1

Unit: mm

+0.10

0.16

–0.06

+0.2

–0.3

2.8
5°

+0.3

–0.1

1.1

0.4±0.2

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector cutoff current I

Collector to
base voltage

Collector to
emitter voltage

2SB0710 V
2SB0710A −60
2SB0710 V
2SB0710A −50

Emitter to base voltage V

1

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage

*

1

*

1

*

Transition frequency f
Collector output capacitance C

Note)*1: Pulse measurement

2: Rank classification

*

Rank Q R S No-rank

Marking
symbol

h

FE1

2SB0710 CQ CR CS C
2SB0710A DQ DR DS D

85 to 170 120 to 240 170 to 340 85 to 340

CBO

CBO

CEO

EBO

h

FE1

h

FE2

V

CE(sat)IC

V

BE(sat)IC

VCB = −20 V, IE = 0 − 0.1 µA
IC = −10 µA, IE = 0 −30 V

IC = −10 mA, IB = 0 −25 V

IE = −10 µA, IC = 0 −5V

2

*

VCE = −10 V, IC = −150 mA 85 340
VCE = −10 V, IC = −500 mA 40

= −300 mA, IB = −30 mA − 0.35 − 0.6 V
= −300 mA, IB = −30 mA −1.1 −1.5 V

VCB = −10 V, IE = 50 mA, f = 200 MHz 200 MHz

T

VCB = −10 V, IE = 0, f = 1 MHz 6 15 pF

ob

Product of no-rank is not classi­fied and have no indication for
rank.

1

2SB0710, 2SB0710A Transistors

PC  T

240

)

200

mW

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

)

−10

V

(

CE(sat)

− 0.3

− 0.1

− 0.03

− 0.01

− 0.003

− 0.001

Collector to emitter saturation voltage V

−3

−1

−1 −3

CE(sat)

Ta=75°C

25°C

−10 −30 −100 −300 −1 000

Collector current IC (mA

a

C

−25°C

)

IC / IB = 10

)

IC  V

−1 200

−1 000

)
mA

(

−800

C

−600

−400

Collector current I

−200

0

0 –12–2 –10–4 –8–6

Collector to emitter voltage VCE (V

V

 I

−100

)
V

(

−30

BE(sat)

−10

− 0.3

− 0.1

− 0.03

Base to emitter saturation voltage V

− 0.01

3

−1

−1 −3

BE(sat)

25°C

Ta = −25°C

−10 −30 −100 −300 −1 000

Collector current IC (mA

CE

IB = −10 mA

C

75°C

Ta = 25°C

−9 mA

−8 mA

−7 mA

−6 mA

−5 mA

−4 mA

−3 mA

−2 mA

−1 mA

IC / IB = 10

)

−800

−700

)

−600

mA

(

C

−500

−400

−300

−200

Collector current I

−100

0

0 −10−8−6−4−2

)

600

500

FE

400

300

Ta = 75°C

200

−25°C

Forward current transfer ratio h

100

0

− 0.01 − 0.03

IC  I

B

VCE = −10 V
T

Base current IB (mA

hFE  I

C

25°C

− 0.1 − 0.3

−1 −3 −10

Collector current IC (A

= 25°C

a

)

VCE = −10 V

)

fT  I

E

240

200

)

MHz

(

160

T

120

80

Transition frequency f

40

0

1 3 10 30 100220550

VCB = −10 V

= 25°C

T

a

Emitter current IE (mA

2

Cob  V

24

)
pF

20

(

ob

16

12

8

4

Collector output capacitance C

0

−3 −10 −30 −100−50−20−5−2

−1

)

Collector to base voltage VCB (V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

−120

)
V

(

−100

CER

−80

−60

−40

−20

Collector to emitter voltage V

0

)

V

 R

CER

1310 30 100 300 1 000

Base to emitter resistance RBE (kΩ

BE

IC = −2 mA

= 25°C

T

a

2SB0710A

2SB0710

)