Panasonic 2SB0709A Datasheet

Transistor

2.8

+0.2
–0.3

1.5

+0.25
–0.050.65±0.15 0.65±0.15

3

1

2

0.950.95

1.9±0.2

0.4

+0.1

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.1

0.16

+0.1

–0.06

1.45

0.1 to 0.3

2.9

+0.2

–0.05

2SB709A

Silicon PNP epitaxial planer type

For general amplification
Complementary to 2SD601A

Features

■

●

High foward current transfer ratio hFE.

●

Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

–45
–45

–7
–200
–100

200
150

–55 ~ +150

Unit

V
V

V
mA
mA

mW

˚C
˚C

Unit: mm

1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*1

hFE Rank classification

Rank Q R S

h

FE

Marking Symbol BQ BR BS

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

*

h

FE

V

CE(sat)

f

T

C

ob

VCB = –20V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz

Conditions

160 ~ 260 210 ~ 340 290 ~ 460

min

–45
–45

–7

160

typ

– 0.3

80

2.7

max

– 0.1
–100

460

– 0.5

Unit

µA
µA

V
V
V

V

MHz

pF

1

Transistor

2SB709A

PC — Ta IC — V

240

)
mW

200

(

C

160

120

80

40

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IB — V

BE

–400

–350

–300

)
µA

(

–250

B

–200

–150

Base current I

–100

–50

0

0 –1.8– 0.6 –1.2

Base to emitter voltage VBE (V

VCE=–5V
Ta=25˚C

CE

–120

–100

)
mA

(

–80

C

–60

–40

Collector current I

–20

0

0 –12–10–8–2 –6–4

)

Collector to emitter voltage VCE (V

IC — V

–240

–200

)

)
mA

(

–160

C

–120

–80

Collector current I

–40

0

Ta=75˚C

0 –2.0–1.6– 0.4 –1.2– 0.8

Base to emitter voltage VBE (V

Ta=25˚C

IB=–300µA

–250µA
–200µA

–150µA
–100µA

–50µA

BE

VCE=–5V

25˚C

–25˚C

)

–60

–50

)
mA

(

–40

C

–30

–20

Collector current I

–10

0

0 –450–150 –300

)

)

–10

V

(

–3

CE(sat)

–1

– 0.3

– 0.1

– 0.03

– 0.01

– 0.003

– 0.001

Collector to emitter saturation voltage V

–1 –10 –100 –1000–3 –30 –300

IC — I

B

VCE=–5V
Ta=25˚C

Base current IB (µA

V

— I

CE(sat)

25˚C

C

Ta=75˚C

–25˚C

Collector current IC (mA

)

IC/IB=10

)

hFE — I

C

600

FE

500

400

Ta=75˚C

300

200

100

Forward current transfer ratio h

25˚C

–25˚C

0

–1 –10 –100 –1000–3 –30 –300

Collector current IC (mA

2

VCE=–10V

fT — I

E

160

VCB=–10V
Ta=25˚C

140

)
MHz

120

(

T

100

80

60

40

Transition frequency f

20

0

0.1 1 10 1000.3 3 30

)

Emitter current IE (mA

)

8

)
pF

7

(

ob

6

5

4

3

2

1

Collector output capacitance C

0

Cob — V

–1 –3 –10 –30 –100

CB

IE=0
f=1MHz
Ta=25˚C

Collector to base voltage VCB (V

)