Panasonic 2SB0642 Datasheet

Transistor

2SB642

Silicon PNP epitaxial planer type

For low-power general amplification

Features

■

●

High foward current transfer ratio hFE.

●

M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

Ratings

–60
–50

–7
–200
–100

400
150

–55 ~ +150

Unit

V
V

V
mA
mA

mW

˚C
˚C

6.9±0.1

1.5

1.5 R0.9

0.4

R0.9

R0.7

1.0±0.1

0.85

0.55±0.1 0.45±0.05

2.5 2.5

1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package

2.5±0.1

3.5±0.1

2.0±0.2

2.4±0.21.25±0.05

123

Unit: mm

1.0

1.0

4.1±0.2 4.5±0.1

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

hFE Rank classification

Symbol

I

CBO

I

CEO

V

CBO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

Rank Q R S

h

FE

160 ~ 260 210 ~ 340 290 ~ 460

Conditions

VCB = –20V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0

*

VCE = –10V, IC = –2mA
IC = –100mA, IB = –10mA
VCB = –10V, IE = 2mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz

min

–60
–50

–7

160

typ

80

3.5

max

–1
–1

460

–1

Unit

nA
µA

V
V
V

V

MHz

pF

1

Transistor 2SB642

PC — Ta IC — V

500

)

450

mW

(

400

C

350

300

250

200

150

100

50

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IB — V

BE

–400

–350

–300

)
µA

(

–250

B

–200

VCE=–5V
Ta=25˚C

CE

–60

–50

)
mA

(

–40

C

–30

–20

Collector current I

–10

0

0 –20–16–4 –12–8

)

Collector to emitter voltage VCE (V

IB=–300µA

IC — V

–240

–200

)
mA

(

–160

C

–120

Ta=75˚C

Ta=25˚C

–250µA

–200µA

–150µA

–100µA

–50µA

BE

VCE=–5V

25˚C

–25˚C

–60

–50

)
mA

(

–40

C

–30

–20

Collector current I

–10

)

)

–10

V

(

CE(sat)

– 0.3

– 0.1

0

0 –450–150 –300

–3

–1

IC — I

B

VCE=–5V
Ta=25˚C

Base current IB (µA

V

— I

CE(sat)

C

Ta=75˚C

–25˚C

)

IC/IB=10

25˚C

–150

Base current I

–100

–50

0

0 –1.8– 0.6 –1.2

Base to emitter voltage VBE (V

hFE — I

C

600

FE

500

400

Ta=75˚C

300

200

100

Forward current transfer ratio h

25˚C

–25˚C

0

–1 –10 –100 –1000–3 –30 –300

VCE=–10V

Collector current IC (mA

–80

Collector current I

–40

0

0 –2.0–1.6– 0.4 –1.2– 0.8

)

)

Base to emitter voltage VBE (V

fT — I

E

160

VCB=–10V
Ta=25˚C

140

)
MHz

120

(

T

100

80

60

40

Transition frequency f

20

0

0.1 1 10 1000.3 3 30

Emitter current IE (mA

)

)

– 0.03

– 0.01

– 0.003

– 0.001

Collector to emitter saturation voltage V

–1 –10 –100 –1000–3 –30 –300

Collector current IC (mA

Cob — V

8

)
pF

7

(

ob

6

5

4

3

2

1

Collector output capacitance C

0

–1 –3 –10 –30 –100

CB

)

IE=0
f=1MHz
Ta=25˚C

Collector to base voltage VCB (V

)

2