Panasonic 2SB0621A, 2SB0621 Datasheet

Transistor

2SB621, 2SB621A

Silicon PNP epitaxial planer type

For low-frequency output amplification
Complementary to 2SD592 and 2SD592A

Features

■

●

Low collector to emitter saturation voltage V

●

High transition frequency fT.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SB621
2SB621A
2SB621

2SB621A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

–55 ~ +150

CE(sat)

Ratings

–30
–60
–25
–50

–5

–1.5

–1
750
150

Unit: mm

5.0±0.2 4.0±0.2

.

5.1±0.213.5±0.5

Unit

V

V

V
A
A

mW

+0.2

0.45

–0.1

1.27 1.27

213

2.54±0.15

+0.2

0.45

–0.1

1:Emitter

2.3±0.2

2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A

˚C
˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage

2SB621
2SB621A
2SB621
2SB621A

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance

*

h

Rank classification

FE1

Symbol

I

CBO

V

CBO

V

CEO

V

EBO

h

FE1

h

FE2

V

CE(sat)

V

BE(sat)

f

T

C

ob

Rank Q R S

h

FE1

85 ~ 170 120 ~ 240 170 ~ 340

Conditions

VCB = –20V, IE = 0

min

typ

max

– 0.1

Unit

µA

–30

IC = –10µA, IE = 0

V

–60
–25

IC = –2mA, IB = 0

V

–50

IE = –10µA, IC = 0

*

VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz

–5
85
50

– 0.2

– 0.85

200

20

340

–0.4
–1.2

30

V

V
V

MHz

pF

1

Transistor 2SB621, 2SB621A

PC—Ta IC—V

1.0

)

0.9

W

(

0.8

C

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

V

CE(sat)—IC

)

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

– 0.01

Ta=75˚C

25˚C

–25˚C

– 0.1 –1 –10

– 0.03

– 0.3 –3

Collector current IC (A

)

IC/IB=10

)

CE

–1.5

–1.25

)
A

(

–1.0

C

– 0.75

– 0.5

Collector current I

– 0.25

0

0 –10–8–2 –6–4

Ta=25˚C

IB=–10mA

–9mA
–8mA
–7mA
–6mA
–5mA

–4mA
–3mA

–2mA

–1mA

Collector to emitter voltage VCE (V

V

BE(sat)—IC

–100

)
V

(

–30

BE(sat)

–10

–3

25˚C

–1

– 0.3

– 0.1

– 0.03

Base to emitter saturation voltage V

– 0.01

– 0.01

– 0.03

Ta=–25˚C

75˚C

– 0.1 –1 –10

– 0.3 –3

Collector current IC (A

IC/IB=10

)

–1.2

VCE=–10V

=25˚C

T

C

–1.0

)
A

(

– 0.8

C

– 0.6

– 0.4

Collector current I

– 0.2

0

0 –12–10–8–2 –6–4

)

Base current IB (mA

hFE—I

500

450

FE

400

350

300

250

200

150

100

Forward current transfer ratio h

50

0

– 0.01

Ta=75˚C

25˚C

–25˚C

– 0.1 –1 –10

– 0.03

Collector current IC (A

IC—I

B

– 0.3 –3

)

C

VCE=–10V

)

fT—I

200

VCB=–10V
Ta=25˚C

180

)

160

MHz

(

140

T

120

100

80

60

40

Transition frequency f

20

0

1 3 10 30 100

Emitter current IE (mA

2

E

50

)

45

pF

(

40

ob

35

30

25

20

15

10

5

Collector output capacitance C

0

–1 –3 –10 –30 –100

)

Collector to base voltage VCB (V

Cob—V

CB

IE=0
f=1MHz
Ta=25˚C

–120

)
V

(

–100

CER

–80

–60

–40

–20

Collector to emitter voltage V

0

0.1 1 10 1000.3 3 30

)

Base to emitter resistance RBE (kΩ

V

—R

CER

BE

IC=–10mA
Ta=25˚C

2SB621A

2SB621

)