Panasonic 2SA0963, 2SA963 User Manual

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Power Transistors

2SA0963 (2SA963)

Silicon PNP epitaxial planar type

For low-frequency power amplification

Complementary to 2SC2209

■ Features

• Large collector power dissipation P

• Output of 4 W to 5 W can be obtained by a complementary pair with

2SC2209

C

■ Absolute Maximum Ratings Ta = 25°C

120°

7.5

+0.5
–0.1

±0.2

2.3

±0.1

1.9

±0.3

3.8

±0.5

11.0

±1.0

16.0

Unit: mm

2.9

±0.2

±0.1

3.05

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation

*

Junction temperature T

Storage temperature T

CBO

CEO

EBO

CP

P

C

C

j

stg

−50 V

−40 V

−5V

−1.5 A

−3A

10 W

150 °C

−55 to +150 °C

0.75

±0.1

4.6

±0.2

123

2.3

0.5

±0.1

±0.2

0.5

±0.1

1.26

±0.1

1: Emitter
2: Collector

TO-126A-A1 Package

3: Base

Note)*: TC = 25°C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

*

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

CBOIC

CEOIC

I

CBO

I

CEO

I

EBO

h

FE

CE(sat)IC

BE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q R

h

FE

80 to 160 120 to 220

= −1 mA, IE = 0 −50 V

= −2 mA, IB = 0 −40 V

VCB = −20 V, IE = 0 −1 µA

VCE = −10 V, IB = 0 −100 µA

VEB = −5 V, IC = 0 −10 µA

VCE = −5 V, IC = −1 A 80 220 

= −1.5 A, IB = − 0.15 A −1.0 V

= −2 A, IB = − 0.2 A −1.5 V

VCB = −5 V, IE = 0.5 A, f = 200 MHz 150 MHz

T

VCB = −5 V, IE = 0, f = 1 MHz 70 pF

ob

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2003 SJD00006BED

1

2SA0963

PC  T

12

10

(W)

C

8

6

4

2

Collector power dissipation P

0

0 20040 80 160120

a

Ambient temperature Ta (°C)

V

 I

(V)

BE(sat)

− 0.1

−10

BE(sat)

−1

TC = −25°C

C

100°C

25°C

Base-emitter saturation voltage V

− 0.01

− 0.01 −1− 0.1

Collector current IC (A)

IC / IB = 10

IC  V

−4.0

−3.5

−3.0

(A)

C

−2.5

−2.0

−1.5

Collector current I

− 1.0

− 0.5

0

0 −10−2 −4 −8−6

CE

Collector-emitter voltage VCE (V)

hFE  I

C

1

000

FE

100

10

TC = 100°C

−25°C

Forward current transfer ratio h

1

− 0.01 −1− 0.1

Collector current IC (A)

TC = 25°C

IB = −40 mA

−35 mA

−30 mA

−25 mA

−20 mA

−15 mA

−10 mA

−5 mA

VCE = −5 V

25°C

V

 I

CE(sat)

−10

(V)

CE(sat)

−1

TC = 100°C

− 0.1
25°C

Collector-emitter saturation voltage V

− 0.01

− 0.01

− 0.1 −1

C

IC / IB = 10

−25°C

Collector current IC (A)

fT  I

240

200

(MHz)

160

T

120

80

Transition frequency f

40

0

0.01 0.1 1 10

E

VCB = −5 V
f = 200 MHz
T

C

= 25°C

Emitter current IE (A)

Cob  V

140

(pF)

ob

C

120

100

80

60

40

20

Collector output capacitance

(Common base, input open circuited)

0

−1 −10 −100

CB

Collector-base voltage VCB (V)

2

IE = 0
f = 1 MHz

= 25°C

T

C

V

 R

−60

−50

(V)

CER

V

−40

−30

−20

−10

Collector-emitter voltage

(Resistor between B and E)

0

0.001 0.01 0.1 1 10

CER

BE

Base-emitter resistance RBE (kΩ)

SJD00006BED

TC = 25°C

)

a

(T

CEO

I

= 25°C)

(T

I

1

a

CEO

000

100

10

I

 T

CEO

1

0 12020 10040 8060

Ambient temperature Ta (°C)

a

VCE = −12 V