Panasonic 2SA838 Technical data

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Transistor

2SA838

Silicon PNP epitaxial planer type

For high-frequency amplification
Complementary to 2SC1359

Features

■

●

High transition frequency fT.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff current

Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

j

T

stg

Symbol

I

CBO

I

CEO

I

EBO

*

h

FE

V

CE(sat)

V

BE

f

T

NF
Z

rb

C

re

Ratings

–30
–20

–5
–30
250
150

–55 ~ +150

Unit

V
V
V

mA

mW

˚C
˚C

Conditions

VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
IC = –10mA, IB = –1mA
VCE = –10V, IC = –1mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 1mA, f = 5MHz
VCE = –10V, IC = –1mA, f = 2MHz
VCE = –10V, IC = –1mA,
f = 10.7MHz

5.0±0.2 4.0±0.2

5.1±0.213.5±0.5

+0.2

0.45

–0.1

1.27 1.27

213

2.54±0.15

min

typ

70

– 0.1
– 0.7

150

300

2.8
22

1.2

0.45

2.3±0.2

+0.2
–0.1

Unit: mm

1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A

max

– 0.1
–100

–10
220

4.0
50

2.0

Unit

µA

µA

V
V

MHz

dB

Ω

pF

*

hFE Rank classification

Rank B C

h

FE

70 ~ 140 110 ~ 220

1

Transistor 2SA838

PC—Ta IC—V

500

)

450

mW

(

400

C

350

300

250

200

150

100

50

Collector power dissipation P

0

0 20016040 12080

Ambient temperature Ta (˚C

hFE—I

C

–120

FE

–100

–80

–60

–40

Ta=75˚C

25˚C

–25˚C

VCE=–10V

CE

)

–30

–25

)
mA

(

–20

C

–15

–10

Collector current I

–5

0

0 –10–8–2 –6–4

)

Collector to emitter voltage VCE (V

Cob—V

6

)
pF

(

5

ob

4

3

2

CB

Ta=25˚C

IB=–250µA

–200µA

–150µA

–100µA

–50µA

f=1MHz
I

=0

E

Ta=25˚C

–100

V

(

–30

CE(sat)

–10

–3

–1

– 0.3

– 0.1

– 0.03

– 0.01

Collector to emitter saturation voltage V

)

)
pF

(

re

V

CE(sat)—IC

IC/IB=10

Ta=75˚C

25˚C

–25˚C

– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

Cre—V

5

4

3

2

CE

IC=–1mA
f=10.7MHz
Ta=25˚C

)

–20

Forward current transfer ratio h

0
– 0.1 –1 –10 –100– 0.3 –3 –30

Collector current IC (mA

fT—I

E

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

0.1 1 10 1000.3 3 30

VCB=–10V
Ta=25˚C

Emitter current IE (mA

1

1

Collector output capacitance C

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Collector to base voltage VCB (V

PG — I

C

24

20

VCE=–10V
f=100MHz
Ta=25˚C

)
dB

(

16

12

8

Power gain PG

4

0

– 0.1 –1 –10 –100– 0.3 –3 –30

)

Collector current IC (mA

)

Common emitter reverse transfer capacitance C

0

–1 –3 –10 –30 –100

)

Collector to emitter voltage VCE (V

NF — I

E

5

4

)
dB

(

3

2

Noise figure NF

1

0

0.1 0.3 1 3 10

VCB=–10V
f=100MHz
Ta=25˚C

Emitter current IE (mA

)

)

2