Panasonic 2SA838 Technical data

2SA0838

Transistor

2SA838

Silicon PNP epitaxial planer type

For high-frequency amplification

Complementary to 2SC1359

■ Features

● High transition frequency fT.

■ Absolute Maximum Ratings (Ta=25˚C)

Parameter	Symbol	Ratings	Unit
Collector to base voltage	VCBO	–30	V
Collector to emitter voltage	VCEO	–20	V
Emitter to base voltage	VEBO	–5	V
Collector current	IC	–30	mA
Collector power dissipation	PC	250	mW
Junction temperature	Tj	150	˚C
Storage temperature	Tstg	–55 ~ +150	˚C

■ Electrical Characteristics (Ta=25˚C)

Unit: mm

5.0±0.2	4.0±0.2

13.5±0.5 5.1±0.2

		+0.2				+0.2
	0.45 –0.1									0.45 –0.1
1.27						1.27

1 2 3								±0.2		1:Emitter
									2.3
										2:Collector
										3:Base
2.54±0.15
										JEDEC:TO–92
										EIAJ:SC–43A

Parameter	Symbol		Conditions	min	typ	max	Unit
	I	V	= –10V, I = 0			– 0.1
Collector cutoff current	CBO	CB	E				µA
	I	V	= –20V, I = 0			–100
	CEO	CE	B
Emitter cutoff current	IEBO	VEB = –5V,CI = 0				–10	µA
Forward current transfer ratio	h *	V	= –10V, I = –1mA	70		220
	FE	CE	C
Collector to emitter saturation voltage	V	I = –10mA, I = –1mA			– 0.1		V
	CE(sat)	C	B
Base to emitter voltage	V	V	= –10V, I = –1mA		– 0.7		V
	BE	CE	C
Transition frequency	f	V	= –10V, I = 1mA, f = 200MHz	150	300		MHz
	T	CB	E
Noise figure	NF	V	= –10V, I = 1mA, f = 5MHz		2.8	4.0	dB
		CB	E
Reverse transfer impedance	Zrb	VCE = –10V,CI = –1mA, f = 2MHz			22	50	Ω
Common emitter reverse transfer		V = –10V, I = –1mA,
	Cre	CE	C		1.2	2.0	pF
capacitance		f = 10.7MHz

*hFE Rank classification

Rank	B	C
hFE	70 ~ 140	110 ~ 220

1

Transistor

PC — Ta

(mW)	500
	450
	400
C
P	350
dissipation
	300
	250
power	200
	150
Collector	100
	50
	0
	0		40			80		120		160		200
			Ambient temperature							Ta		(˚C)

hFE — I

C

–120

VCE=–10V

FE

–100

h

ratio

Ta=75˚C

–80

transfer

–60

–25˚C

25˚C

current

–40

Forward

–20

0

– 0.1

– 0.3

–1

–3

–10

–30

–100

Collector current

IC

(mA)

fT — I

E

600

VCB=–10V

(MHz)

Ta=25˚C

500

f

400

T

frequency

300

Transition

100

200

0

0.1

0.3

1

3

10

30

100

Emitter current IE (mA)

I

C — V

CE

–30

Ta=25˚C

(mA)

–25

C

–20

IB=–250 A

I

current

–200

A

–15

–150

A

Collector

–10

–100

A

–5

–50

A

0

0

–2

–4

–6

–8

–10

Collector to emitter voltage

VCE

(V)

Cob — V

CB

6

(pF)

f=1MHz

Ta=25˚C

ob

5

IE=0

C

capacitance

4

output

3

2

Collector

1

0

– 0.1

– 0.3

–1

–3

–10

–30

–100

Collector to base voltage

VCB

(V)

PG — I

C

24

VCE=–10V

f=100MHz

20

Ta=25˚C

(dB)

16

PG

12

gain

Power

8

4

0

– 0.1

– 0.3

–1

–3

–10

–30

–100

Collector current IC (mA)

						2SA838
			VCE(sat) — I			C
(V)	–100						IC/IB=10
CE(sat)	–30
V	–10
voltage
	–3
saturation	–1
					Ta=75˚C
	– 0.3			25˚C
emitter
	– 0.1			–25˚C
to
Collector	– 0.03
	– 0.01
	– 0.1	– 0.3	–1	–3		–10	–30	–100
		Collector current				IC	(mA)
			Cre — V		CE
(pF)	5
						IC=–1mA
re						f=10.7MHz
C						Ta=25˚C

capacitance	4
	3
transfer
reverse	2
emitterCommon	1
	0
	–1		–3						–10				–30					–100
	Collector to emitter voltage VCE																		(V)
					NF — I							E
	5
													VCB=–10V
													f=100MHz
													Ta=25˚C
(dB)	4
NF	3
figure	2
Noise	1
	0
	0.1		0.3		1							3						10

Emitter current IE (mA)

2