Panasonic 2SA2174J User Manual

Transistors

Unit: mm

1: Base
2: Emitter
3: Collector SSMini3-F1 Package

0.27±0.02

3

1 2

0.12

+0.03
–0.01

0.80±0.05(0.80)

0.85

1.60±0.05

0 to 0.02

0.10 max.

0.70

+0.05

–0.03

(0.375)

5°

5°

1.60

+0.05
–0.03

1.00±0.05

(0.50)(0.50)

+0.05

–0.03

This product complies with the RoHS Directive (EU 2002/95/EC).

2SA2174J

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC6054J

 Features

 High forward current transfer ratio h
 SS-Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing.

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power dissipation

Junction temperature

Storage temperature

FE

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

T

j

T

stg

−60

−50

−7

−100

−200

125 mW

125

−55 to +125 °C

V

V

V

mA

mA

°C

Marking Symbol: 7L

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Forward current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

V

CBOIC

V

CEOIC

V

EBOIE

I

CBO

I

CEO

h

FE

V

CE(sat)IC

f

C

= −10 µA, IE = 0

= −2 mA, IB = 0

= −10 µA, IC = 0

VCB = −20 V, IE = 0

VCE = −10 V, IB = 0

VCE = −10 V, IC = −2 mA 160 460

= −100 mA, IB = −10 mA

VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz

T

VCB = −10 V, IE = 0, f = 1 MHz 2.2 pF

ob

−60

−50

− 7

− 0.1 µA

−100 µA

− 0.2 − 0.5

V

V

V



V

Publication date: November 2005 SJC00342AED 1

2SA2174J

0 40 12080

0

140

40

60

20

100

120

80

2SA2174J_PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C

)

0 −4 −8 −12

0

−10

−20

−30

−50

−40

−60

−70

−80

2SA2174J_IC-V

CE

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

Ta = 25°C

−50 µA

−100 µA

−150 µA

−200 µA

−250 µA

IB = −300 µA

0

− 0.4− 0.2 − 0.8 −1.0− 0.6 −1.2 −1.4

0

−30

−40

−50

−20

−10

−60

−70

−80

−90

−100

2SA2174J_IC-V

BE

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V

)

VCE = −10 V

Ta = 85°C

25°C

−25°C

− 0.1 −1 −10 −100

− 0.01

− 0.1

−1

Collector current IC (mA

)

Collector-emitter saturation voltage V

CE(sat)

(

V

)

2SA2174J_V

CE(sat)-IC

IC /IB = 10

Ta = 85°C

25°C

−25°C

−1 −10 −100

−1 000

0

300

350

250

400

50

100

200

150

Collector current IC (mA

)

Forward current transfer ratio h

FE

2SA2174J_hFE-I

C

VCE = −10 V

Ta = 85°C

25°C

−25°C

0 −8 −24−16 −32 −40

1

10

Collector-base voltage VCB (V

)

2SA2174J_Cob-V

CB

Collector output capacitance

(Common base, input open circuited) C

ob

(

pF

)

f = 1 MHz
Ta = 25°C

This product complies with the RoHS Directive (EU 2002/95/EC).

PT  Ta IC  VCE IC  V

V

 IC hFE  IC Cob  V

CE(sat)

BE

CB

2 SJC00342AED