Panasonic 2SA2174G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SA2174G

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC6054G

 Features

 High forward current transfer ratio h
 SS-Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing.

FE

 Package

Code

SSMini3-F3

Marking Symbol: 7L

Pin Name

1. Base

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

-55 to +125 °C

stg

-60

-50

-7

-100

-200

mA

mA

125 mW

125

V

V

V

°C

2. Emitter

3. Collector

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open) I

Collector-emitter cutoff current (Base open) I

Forward current transfer ratio h

Collector-emitter saturation voltage V

CBOIC

CEOIC

EBOIE

CBO

CEO

FE

CE(sat)IC

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

C

= -10 mA, IE = 0

= -2 mA, IB = 0

= -10 mA, IC = 0

-60

-50

- 7

VCB = -20 V, IE = 0

VCE = -10 V, IB = 0

VCE = -10 V, IC = -2 mA 160 460

= -100 mA, IB = -10 mA

VCB = -10 V, IE = 1 mA, f = 200 MHz 80 MHz

T

VCB = -10 V, IE = 0, f = 1 MHz 2.2 pF

ob

- 0.2 - 0.5

V

V

V

- 0.1 mA

-100 mA



V

Publication date: May 2007 SJC00386AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 40 12080

0

140

40

60

20

100

120

80

2SA2174J_PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C

)

0 −4 −8 −12

0

−10

−20

−30

−50

−40

−60

−70

−80

2SA2174J_IC-V

CE

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

Ta = 25°C

−50 µA

−100 µA

−150 µA

−200 µA

−250 µA

IB = −300 µA

0

− 0.4− 0.2 − 0.8 −1.0− 0.6 −1.2 −1.4

0

−30

−40

−50

−20

−10

−60

−70

−80

−90

−100

2SA2174J_IC-V

BE

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V

)

VCE = −10 V

Ta = 85°C

25°C

−25°C

− 0.1 −1 −10 −100

− 0.01

− 0.1

−1

Collector current IC (mA

)

Collector-emitter saturation voltage V

CE(sat)

(

V

)

2SA2174J_V

CE(sat)-IC

IC /IB = 10

Ta = 85°C

25°C

−25°C

−1 −10 −100

−1 000

0

300

350

250

400

50

100

200

150

Collector current IC (mA

)

Forward current transfer ratio h

FE

2SA2174J_hFE-I

C

VCE = −10 V

Ta = 85°C

25°C

−25°C

0 −8 −24−16 −32 −40

1

10

Collector-base voltage VCB (V

)

2SA2174J_Cob-V

CB

Collector output capacitance

(Common base, input open circuited) C

ob

(

pF

)

f = 1 MHz
Ta = 25°C

2SA2174G

PT  Ta IC  VCE IC  V

V

 IC hFE  IC Cob  V

CE(sat)

BE

CB

2 SJC00386AED