Publication date: May 2005 SJC00336AED
High transition frequency f
Optimum for high-density mounting and downsizing of the equipment for
Ultraminiature leadless package
Emitter-base voltage (Collector open)
Electrical Characteristics
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector ML3-N2 Package
0.60±0.05
1.00±0.05
2
1
3
0.39
+0.01
−0.03
0.25±0.05
0.25±0.05
0.50±0.05
0.65±0.01
0.15±0.05
2
1
0.35±0.01
0.05±0.03
0.05±0.03
3
This product complies with the RoHS Directive (EU 2002/95/EC).
0 40 12080
0
120
40
80
2SA2163_PC-T
a
Collector power dissipation P
C
(
mW
)
Ambient temperature Ta (°C
)
0 −0.4 −0.8 −1.2
0
−10
−20
−30
2SA2163_IC-V
CE
Collector current I
C
(
mA
)
Collector-base voltage VCB (V
)
VCE = −10 V
Ta = 85°C
25°C
−25°C
0 −4 −8 −12
0
−4
−8
−12
−16
−20
2SA2163_IC-V
CE
Collector current I
C
(
mA
)
Collector-emitter voltage VCE (V
)
IB = 200 µA
180 µA
160 µA
140 µA
120 µA
100 µA
Ta = 25°C
− 0.1 −1 −10 −100
− 0.01
− 0.1
−1
Collector current IC (mA
)
Collector-emitter saturation voltage V
CE(sat)
(
V
)
2SA2163_V
CE(sat)-IC
IC /IB = 10
Ta = 85°C
25°C
−25°C
− 0.1 −1 −10 −100
0
120
160
40
80
Collector current IC (mA
)
Forward current transfer ratio h
FE
2SA2163_hFE-I
C
VCE = −5 V
Ta = 85°C
25°C
−25°C
0 10 20 30
0.1
10
1
Collector-base voltage VCB (V
)
2SA2163_Cob-V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(
pF
)
f = 1 MHz
Ta = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).