Panasonic 2SA2162G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SA2162G

Silicon PNP epitaxial planar type

For general amplification
Complementary to 2SC6036G

 Features

 Low collector-emitter saturation voltage V
 SSS-Mini type package, allowing downsizing of the equipment and automatic

insertion through the tape packing

CE(sat)

 Package

Code

SSSMini3-F2

Marking Symbol: 2U

Pin Name

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

–15 V

–12 V

–5 V

–500 mA

–1 A

100 mW

125

–55 to +125

°C

°C

1. Base

2. Emitter

3. Collector

 Electrical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open)

Collector-base cutoff current (Emitter open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance

(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

CBOIC

CEOIC

V

EBOIE

I

CBO

FE

CE(sat)IC

T

C

ob

= –10 mA, IE = 0 –15 V

= –1 mA, IB = 0 –12 V

= –10 mA, IC = 0 –5 V

VCB = –10 V, IE = 0 – 0.1

VCE = –2 V, IC = –10 mA 270 680

= –200 mA, IB = –10 mA –250 mV

VCB = –2 V, IE = 10 mA, f = 200 MHz 200 MHz

VCB = –10 V, f = 1 MHz 4.5 pF

mA



Publication date : May 2007 SJC00384AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0

20

40

60

80

100

120 140

0

20

40

60

80

100

120

2SA2162_ PC-T

a

Collector power dissipation P

C

(

mW

)

Ambient temperature Ta (°C)

0

− 0.5 −1.0 −1.5 −2.0 −2.5 −3.0

0

−10

−20

−30

−40

−50

−60

−70

2SA2162_ IC-V

CE

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V)

−140 µA

−120 µA

−100 µA

−80 µA

−60 µA

−40 µA

−20 µA

IB = −160 µA

Ta = 25°C

0

− 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4

0

−10

−20

−30

−40

−50

−60

−100

−70

−80

−90

2SA2162_ IC-V

BE

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V)

V

CE

= −2 V

Ta = 85°C

25°C

−25°C

− 0.1 −1 −10 −100 −1 000

− 0.01

− 0.1

−1

2SA2162_ V

CE(sat)-IC

Collector-emitter saturation voltage V

CE(sat)

(

V

)

Collector current IC (mA)

IC / IB = 20

Ta = 85°C

25°C

−25°C

−1 −10 −100 −1 000

0

100

200

300

400

500

600

2SA2162_ hFE-I

C

Forward current transfer ratio h

FE

Collector current IC (mA)

V

CE

= −2V

Ta = 85°C

25°C

−25°C

0 5 10

1

10

100

2SA2162_ Cob-V

CB

Collector output capacitance

(Common base, input open circuited) C

ob

(

pF

)

Collector-base voltage VCB (V

)

f = 1 MHz
Ta = 25°C

2SA2162G

PC  Ta IC  VCE IC  V

V

 IC hFE  IC Cob  V

CE(sat)

BE

CB

2 SJC00384AED