Panasonic 2SC6037G, 2SA2161G User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

2SA2161G

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SC6037G

■ Features

• Low collector-emitter saturation voltage V

• SS-Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing

CE(sat)

■ Package

• Code
SSMini3-F3

• Marking Symbol: 2U

• Pin Name

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

−55 to +125 °C

stg

−15 V

−12 V

−5V

−500 mA

−1A

125 mW

125 °C

1. Base

2. Emitter

3. Collector

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

CBOIC

CEOIC

EBOIE

I

CBO

FE

CE(sat)IC

T

ob

= −10 µA, IE = 0 −15 V

= −1 mA, IB = 0 −12 V

= −10 µA, IC = 0 −5V

VCB = −15 V, IE = 0 − 0.1 µA

VCE = −2 V, IC = −10 mA 270 680 

= −200 mA, IB = −10 mA −250 mV

VCB = −2 V, IE = 10 mA, f = 200 MHz 200 MHz

VCB = 10 V, IE = 0, f = 1 MHz 4.5 pF

Publication date: May 2007 SJC00383AED

1

2SA2161G

This product complies with the RoHS Directive (EU 2002/95/EC).

PC  T

140

)

120

mW
(

C

100

80

60

40

20

Collector power dissipation P

0

0

Ambient temperature Ta (°C

−1

)
V

(

CE(sat)

− 0.1

60

20

40

V

CE(sat)

Ta = 85°C

80

 I

= 25°C

T

a

IC  V

hFE  I

Ta = 85°C

25°C

−25°C

CE

IB = −160 µA

C

−140 µA

−120 µA

−100 µA

−80 µA

−40 µA

−20 µA

VCE (V

V

CE

−60 µA

= −2 V

−100

−90

−80

)
A

−70

(m

C

−60

−50

−40

−30

Collector current I

−20

−10

0

0 −1.4−1.2−1.0− 0.8− 0.2 − 0.6− 0.4

)

100

(pF)

ob

C

10

a

120 140

100

)

C

I

/ IB = 20

C

−70

−60

)

A

−50

(m

C

−40

−30

−20

Collector current I

−10

0

0 − 0.5 −1.0 −1.5 −2.0 −2.5 −3.0

Collector-emitter voltage

600

500

FE

400

300

IC  V

BE

VCE = −2 V

Ta = 85°C

−25°C

25°C

Base-emitter voltage VBE (V

Cob  V

CB

f = 1 MHz
T

a

)

= 25°C

−25°C

25°C

Collector-emitter saturation voltage V

− 0.01

Collector current IC (mA

200

100

Forward current transfer ratio h

Collector output capacitance

(Common base, input open circuited)

−1 000−100−10−1− 0.1

)

0

−1 −10 −100

Collector current IC (mA

−1 000

)

1

0

510

Collector-base voltage VCB (V

)

2

SJC00383AED