Panasonic 2PG402 Datasheet
IGBTs
2PG402
Insulated Gate Bipolar Transistor
■ Features
●High breakdown voltage: V
●Allowing to control large current: I
●Housed in the surface mounting package
CES
= 400V
C(peak)
■ Applications
●For flash-light for use in a camera
■ Absolute Maximum Ratings (T
Parameter
Collector to emitter voltage
Gate to emitter voltage
Collector current
Allowable power
dissipation
DC
Pulse
TC = 25°C
Ta = 25°C
Channel temperature
Storage temperature
Symbol
V
CES
V
GES
I
C
I
CP
P
C
T
ch
T
stg
= 130A
= 25°C)
C
Ratings
−55 to +150
400
±8
5
130
10
1
150
Unit
V
V
A
A
W
°C
°C
4.35±0.1
0.85±0.1
1
6.5±0.1
5.3±0.1
3.0±0.1
4.6±0.1
23
Marking
2.5±0.1
2.5±0.1
5.5±0.1
7.3±0.1
0.2max.2.3±0.1
9.8±0.1
0.75±0.1 0.5±0.1
0.05 to 0.15
2.3±0.1
unit: mm
1.0±0.2
1.0±0.1
1: Emitter
2: Collector
3: Gate
U Type Package
■ Electrical Characteristics (T
Parameter
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
Symbol
I
CES
I
GES
V
CES
V
GE(th)
V
CE(sat)
C
ies
t
d(on)
t
r
t
d(off)
t
f
= 25°C)
C
Conditions
VCE = 320V, VGE = 0
VGE = ±8V, VCE = 0
IC = 1mA, VGE = 0
VCE = 10V, IC = 1mA
VGE = 5V, IC = 5A
VGE = 5V, IC = 130A
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V, IC = 130A
VGE = 5V, Rg = 25Ω
min
400
0.5
typ
1930
130
1.4
350
1.5
max
10
±1
1.5
2
10
Unit
µA
µA
V
V
V
pF
ns
µs
ns
µs
1
IGBTs
2PG402
IC V
CE
200
160
)
A
(
VGE=8V
C
120
80
Collector current I
40
0
02420164128
5V
4V
Collector to emitter voltage VCE (V
C
, C
, C
oes
V
res
C
ies
,
)
)
10000
pF
(
res
Common emitter
,C
(
1000
oes
,C
ies
C
)
, Output capacitance
)
Common emitter
(
Common emitter
(
Input capacitance
Reverse transfer capacitance
ies
100
10
1
0 400100 300200
Collector to emitter voltage VCE (V
3V
TC=25˚C
2V
CE
f=1MHz
=25˚C
T
C
C
oes
C
res
V
I
CE(sat)
)
10
V
VGE=5V
(
=25˚C
T
C
CE(sat)
3
1
0.3
0.1
Collector to emitter saturation voltage V
0.01 1000100.1 1001
)
Ta=0˚C
25˚C
100˚C
Collector current IC (A
PC Ta
15
)
W
(
12
C
(1)
9
6
(2)
3
(3)
Collector power dissipation P
0
0 15012510025 7550
)
Ambient temperature Ta (˚C
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
C
200
160
)
A
(
C
120
80
Collector current I
40
0
012108264
)
Gate to emitter voltage VGE (V
IC V
GE
VCE=10V
=25˚C
T
C
)
)
2
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