OPTEK OPB817 Datasheet
Prod uct Bul le tin OPB817
February 2001
Slotted Op ti cal Switch
Type OPB817
Fea tures
.20” (5.08 mm) wide gap
•
24” minimum, 26 AWG wire leads
•
• Dust protection
• .86” (21.8 mm) deep slot
De scrip tion
The OPB817 consists of an infrared
emitting diode and an NPN silicon
phototransistor mounted in an opaque
housing with clear windows for dust
protection. The extended deep slot
allows for a longer reach of the optical
center line from the mounting plane, .90”
(22.86 mm).
Internal apertures are .010” x 0.06” for
the phototransistor “S side” and .050” x
.06” for the LED “E side”.
Custom electrical, wire or cabling is
available. Contact your local
representative or Optek for more
information.
Visit our website at www.optekinc.com
or email us at sensors@optekinc.com
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Stor age and Op er ating Tem per a ture Range.................... -40° C to +80° C
Input Di ode
For ward DC Cur rent .............................................. 50 mA
Peak For ward Cur rent (1 µs pulse width, 300 pps) ........................ 3.0 A
Re verse DC Volt age ............................................... 2.0 V
Power Dis si pa tion............................................. 100 mW
Out put Phototransistor
Col lec tor-Emitter Volt age ............................................ 30 V
Emit ter-Collector Volt age............................................ 5.0 V
Col lec tor DC Cur rent.............................................. 30 mA
Power Dis si pa tion............................................. 100 mW
NOTES:
(1) De rate lin early 1.67 mW/° C above 25° C.
(2) All pa ram e ters tested us ing pulse tech nique.
(3) Clear dust pro tection.
PRECAUTIONS: Ex po sure of the plas tic body to chlo ri nated hy dro car bons and ke tones such as
thread lock and in stant ad he sive prod ucts will de grade the plas tic body. Cleaning agents
meth a nol and isopropanol are rec om mended. Spray or wipe do not sub merge.
(1)
(1)
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
29
Type OPB817
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted)
SYM BOL PA RAME TER MIN MAX UNITS TEST CONDITIONS
In put Di ode
V
I
R
Forward Voltage 1.8 V
F
Reverse Current
Phototransistor
V
(BR)CEO
V
(BR)ECO
I
CEO
Collector-Emitter Breakdown Voltage 30 V
Emitter-Collector Breakdown Voltage 5.0 V
Collector-Emitter Leakage Current 100 nA
Cou pled
I
C(ON)
V
CE(SAT)
On-State Collector Current 1.0 10 mA
Collector-Emitter Saturation Voltage 0.40 V
100
IF = 20 mA
VR = 2 V
µA
IC = 1 mA, IF = 0, Ee = 0
IE = 100 µA, IF = 0, Ee = 0
VCE = 10 V, IF = 0, Ee = 0
VCE = 5.0, IF = 20 mA
IC = 100 µA, IF = 20 mA
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
30
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