Prod uct Bul le tin OPB755T
June 1996
Re flec tive Ob ject Sen sor
Type OPB755T
Fea tures
• High contrast ratio, 1000 to 1
minimum
• 12.0" ± 0.5" min. UL#1429 26 AWG
wire leads terminated into an AMP
#640442-5 connector
• Low cost plastic housing
De scrip tion
The OPB755T reflective assembly
features a phototransistor output
designed to decrease low-level light gain
while not affecting the high-level light
gain. Available without mounting tabs as
OPB755N.
Available with PC Board mountable
leads as OPB750 series. Logic output
sensors available in the
OPB760/OPB770 series.
12.0 ± 0.5
(304.8 ± 12.7)
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . . -40o C to +80o C
In put Di ode
For ward DC Cur rent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur rent (1 µs pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Re verse DC Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(1)
Out put Pho to tran sis tor
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Col lec tor DC Cur rent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Notes:
(1) Derate Linearly 1.82 mW/o C above 25o C.
(2) All parameters tested using pulse technique.
(3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in
chlorinated hydrocarbons and ketones.
(4) Photocurrent is measured using an Eastman Kodak Neutral White test card having a 90%
diffuse reflectance as a reflecting surface. Reference: Eastman Kodak, Catalog #1257795.
(5) I
is the photocurrent measured with current to the input diode and a 5% reflecting
C(OFF)
surface.
(1)
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
11-48
Type OPB755T
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted)
SYM BOL PA RAME TER MIN MAX UNITS TEST CON DI TIONS
In put Di ode
V
I
R
Out put Pho to tran sis tor
V
(BR)CEO
I
CEO
Cou pled
V
CE(SAT)
I
C(ON)
I
C(OFF)
Typi cal Per form ance Curves
Forward Voltage 1.80 V IF = 40 mA
F
Reverse Current
Collector-Emitter Breakdown Voltage
100
30 V
µA
VR = 2.0 V
IC = 100 µA
Collector Dark Current 100 nA VCE = 10 V, IF = 0, H = 0
Saturation Voltage
On-State Collector Current
Off-State Collector Current
500
375
250
0.40 V
µA
µA
µA
250 nA
IC = 150 µA, IF = 30 mA, d = 0.22”
VCE = 5 V, IF = 30 mA, d = 0.08”
VCE = 5 V, IF = 30 mA, d = 0.15”
VCE = 5 V, IF = 30 mA, d = 0.22”
IF = 30 mA, VCE = 5 V,
d = 0.08”, 0.15”, 0.22”
(5)
(4)
(4)
(4)
Normalized Collector Current vs.
Distance to Reflective Surface - Inches
Object Distance
Normalized to d = .150"
IF = 30 mA
VCE = 5 V
+2σ
Average
-2σ
Normalized Ouput Current vs.
Forward Current
Normalized to IF = 30 mA
VCE = 5 V
Average
+2σ
-2σ
Forward Current - mA
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
11-49
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