
Prod uct Bul le tin OP599
June 1996
NPN Plas tic Sili con Pho to tran sis tors
Type OP599 Se ries
Fea tures
• Variety of sensitivity ranges
• T-1 3/4 package style
De scrip tion
The OP599 series phototransistor
consists of an NPN silicon
phototransistor mounted in a dark blue
plastic injection molded shell package.
The narrow receiving angle provides
excellent on-axis coupling. The sensors
are 100% production tested for close
correlation with Optek GaAlAs emitters.
Optek’s packaging process provides
excellent optical and mechanical axis
alignment. The shell also provides
excellent optical lens surface, control of
chip placement, and consistency of the
outside package dimensions.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Con tinu ous Col lec tor Cur rent. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40o C to +100o C
Lead Sol der ing Tem pera ture (1/16 inch [1.6 mm] from case for 5 sec. with
sol der ing iron). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/o C above 25o C.
(3) VCE = 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission
wavelength of 890 nm and E
(4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in
the area of the leads.
of .25 mW/cm2.
e(APT)
(1)
(2)
Typi cal Per form ance Curves
Typi cal Spec tral Re sponse
Wave length - nm
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972)323- 2396

Types OP599
Elec tri cal Char ac ter is tics (TA = 25oC un less oth er wise noted)
SYM BOL PA RAME TER MIN TYP MAX UNITS TEST CON DI TIONS
On-State Collector Current OP599D
I
C(ON)
I
CEO
V
(BR)CEO
V
(BR)ECO
V
CE(SAT)
Collector Dark Current 100 nA VCE = 10.0 V, Ee = 0
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector-Emitter Saturation Voltage
Typi cal Per form ance Curves
OP599C
OP599B
OP599A
0.20
0.40
1.20
2.35
1.95
3.85
30 V
5.0 V
0.40 V
mA
See Note (3)
mA
See Note (3)
mA
See Note (3)
mA
See Note (3)
IC = 100 µA
IE = 100 µA
IC = 100 µA
Ee = 0.25 mW/cm
2(3)
Ee - Irradiance - mW/cm
2
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
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