OPTEK OP245PS Datasheet
Prod uct Bul le tin OP245PS
November 2000
Plas tic Point Source In fra red Emitting Diode
Type OP245PS
Anode
Cathode
Fea tures
Point source irradiance pattern
•
Wavelength matched to silicon’s peak
•
response
• Fast switching speed
Side-looking package for space limited
•
applications
De scrip tion
The OP245PS is an 850 nm, infrared
emItting diode molded in IR transmissive
amber-tinted epoxy packages. The
side-looking package is for use in PC
board mounted slotted switches or as
easily mounted interrupt detectors.
The stable VF vs. Temperature
characteristic make them ideal for
applications where voltage is limited
(such as battery operation).
The low tr/tf make them ideal for high
speed operations.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Re verse Voltage .................................................. 2.0 V
Con tin u ous For ward Current........................................ 50 mA
Peak For ward Cur rent (2 µs pulse width, 0.1% duty cy cle).................. 1.0 A
Stor age and Op er ating Tem per a ture Range................... -40° C to +100° C
Lead Sol dering Tem per a ture [1/16 inch (1.6mm) from case for 5 sec. with sol der ing
iron] ........................................................ 260° C
Power Dis si pa tion............................................. 100 mW
NOTES:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 seconds maximum when flow
sol der ing. A maximum of 20 grams force may be ap plied to the leads when sol der ing.
(2) De rate lin early 1.33 mW/°C above 25°.
(3) E
is a mea sure ment of the av er age apertured ra di ant in ci dence upon a sens ing area
e(APT)
0.180” (4.57 mm) in di am e ter, per pen dic u lar to and cen tered on the me chan i cal axis of the
lens, and 0.653” (16.6 mm) from the mea sure ment sur face. E
uni form within the mea sured area.
is not nec es sar ily
e(APT)
(1)
(2)
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
7
Type OP245PS
Elec tri cal Char ac ter is tics (TA = 25o C un less oth er wise noted)
SYM BOL PA RAM E TER MIN TYP MAX UNITS TEST CON DI TIONS
E
e(APT)
θ
V
I
λp
B
HP
t
t
Apertured Irradiance .10 .90 mW/cm2IF = 20 mA
Forward Voltage
F
R
Reverse Current
1.80
20
V IF = 20 mA
µA
VR = 2 V
Wavelength at Peak Emission 850 nm IF = 20 mA
Spectral Bandwidth Between Half Power
Points
Emission Angle at Half Power
Rise Time
r
Fall Time
f
50 nm
±18°
10
10 ns
Deg.
ns
IF = 20 mA
IF = 20 mA
I
F(PK)
PW = 10 µs, D.C. = 10%
(3)
= 20 mA
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
8
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