ON Semiconductor SC-74 Technical data
MMQA Quad Common
Anode Series
Preferred Devices
SC-74 Quad Monolithic
Common Anode
Transient Voltage Suppressors
for ESD Protection
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This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Features
•SC-74 Package Allows Four Separate Unidirectional Configurations
•Peak Power - Min. 24 W @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
•Peak Power - Min. 150 W @ 20 ms (Unidirectional),
per Figure 6 Waveform
•Maximum Clamping Voltage @ Peak Pulse Current
•Low Leakage < 2.0 mA
•ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
•Pb-Free Packages are Available
THERMAL CHARACTERISTICS (T
Characteristic Symbol Value Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
@ TA ≤ 25°C
Peak Power Dissipation @ 20 ms (Note 2)
@ TA ≤ 25°C
Total Power Dissipation on FR‐5 Board
(Note 3) @ TA = 25°C
Thermal Resistance from
Junction-to-Ambient
Total Power Dissipation on Alumina
Substrate (Note 4) @ TA = 25°C
Derate above 25°C
Thermal Resistance from
Junction-to-Ambient
Junction and Storage Temperature Range TJ, T
Lead Solder Temperature - Maximum
(10 Second Duration)
= 25°C unless otherwise noted)
A
P
pk
P
pk
°PD° °225
R
q
JA
°PD° °300
R
q
JA
stg
T
L
24 W
150 W
1.8
556 °C/W
2.4
417 °C/W
°- 55 to
+150°
260 °C
mW°
mW/°C
°
mW°
mW/°C
°C
SC-74 QUAD TRANSIENT
VOLTAGE SUPPRESSOR
24 WATTS PEAK POWER
5.6 - 33 VOLTS
PIN ASSIGNMENT
1
2
6
1
SC-74
PLASTIC
CASE 318F
3
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
MARKING DIAGRAM
xxxMG
G
xxx = Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 5 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 5 of this data sheet.
6
5
4
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 7
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMQA/D
MMQA Quad Common Anode Series
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
UNIDIRECTIONAL
(Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (VF = 0.9 V Max @ IF = 10 mA)
Max
Reverse
Leakage
ZTIR
Current
V
R
Max Zener
Impedance
(Note 7)
ZZT @ IZT
(W) (mA)
Max
Reverse
Surge
Current
I
RSM
(A)
Device
Breakdown Voltage
V
ZT
(Note 5)
(V)
@ I
Min Nom Max (mA) (nA) (V)
MMQA5V6T1,T3 5.32 5.6 5.88 1.0 2000 3.0 400 3.0 8.0 1.26 - -
MMQA6V2T1,T3 5.89 6.2 6.51 1.0 700 4.0 300 2.66 9.0 10.6 - -
MMQA6V8T1,T3 6.46 6.8 7.14 1.0 500 4.3 300 2.45 9.8 10.9 100 250
MMQA12VT1,T3 11.4 12 12.6 1.0 75 9.1 80 1.39 17.3 14 - -
MMQA13VT1 12.4 13 13.7 1.0 75 9.8 80 1.29 18.6 15 - -
MMQA15VT1,T3 14.3 15 15.8 1.0 75 11 80 1.1 21.7 16 - -
MMQA18VT1,T3 17.1 18 18.9 1.0 75 14 80 0.923 26 19 - -
MMQA20VT1,T3 19 20 21 1.0 75 15 80 0.84 28.6 20.1 - -
MMQA21VT1,T3 20 21 22.1 1.0 75 16 80 0.792 30.3 21 - -
MMQA22VT1,T3 20.9 22 23.1 1.0 75 17 80 0.758 31.7 22 - -
MMQA24VT1,T3 22.8 24 25.2 1.0 75 18 100 0.694 34.6 25 - -
MMQA27VT1,T3 25.7 27 28.4 1.0 75 21 125 0.615 39 28 - -
MMQA33VT1,T3 31.4 33 34.7 1.0 75 25 200 0.504 48.6 37 - -
Max
Reverse
Voltage @
I
RSM
(Note 6)
(Clamping
Voltage)
V
RSM
(V)
Capacitance
@ 0 Volt
Maximum
Bias, 1 MHz
Temperature
Coefficient
of V
Z
(pF)
(mV/°C) Min Max
1. Non‐repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 4.
2. Non‐repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 4.
3. FR‐5 = 1.0 x 0.75 x 0.62 in.
4. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
5. VZ measured at pulse test current IT at an ambient temperature of 25°C.
6. Surge current waveform per Figure 5 and derate per Figure 4.
7. ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are I
with AC frequency = 1 kHz.
TYPICAL CHARACTERISTICS
300
250
200
150
100
C, CAPACITANCE (pF)
50
0
5.6 6.8 12 20 27
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Typical Capacitance
BIASED AT 0 V
BIASED AT 1 V
BIASED AT 50%
OF VZ NOM
33
10,000
1,000
100
, LEAKAGE (nA)
R
I
10
0
5.6 6.8 20 27
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 2. Typical Leakage Current
Z(AC)
= 0.1 I
+150°C
+25°C
-40°C
Z(DC)
33
,
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2
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