ON Semiconductor RB751V40T1 Technical data

© Semiconductor Components Industries, LLC, 2006

January, 2006 − Rev. 3

1 Publication Order Number:

RB751S40T1/D

RB751S40T1

Schottky Barrier Diode

These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.

Features

• Extremely Fast Switching Speed

• Extremely Low Forward Voltage − 0.28 V (Typ) @ I

F

= 1.0 mAdc

• Low Reverse Current

• Lead−Free Plating

• Pb−Free Package is Available

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Reverse Voltage V

RM

40 V

Reverse Voltage V

R

30 V

Forward Continuous Current (DC) I

F

30 mA

Peak Forward Surge Current I

FSM

500 mA

ESD Rating: Class 1C per Human Body Model

Class A per Machine Model

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C
Derate above 25°C

P

D

200

1.57

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

R

q

JA

635 °C/W

Junction and Storage

Temperature Range

TJ, T

stg

−55 to +150 °C

1. FR−5 Minimum Pad.

40 V SCHOTTKY

BARRIER DIODE

1

CATHODE

2

ANODE

http://onsemi.com

SOD−523

CASE 502

PLASTIC

5E = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)

MARKING DIAGRAM

1

2

5E MG

G

12

Device Package Shipping

†

ORDERING INFORMATION

RB751S40T1 SOD−523 4000/Tape & Reel
RB751S40T1G SOD−523

(Pb−Free)

4000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

查询RB751S40T1G供应商

RB751S40T1

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

Reverse Breakdown Voltage

(IR = 10 mA)

V

(BR)R

30 − − V

Total Capacitance

(V

R

= 1.0 V, f = 1.0 MHz)

C

T

− 2.0 2.5 pF

Reverse Leakage

(VR = 30 V)

I

R

− 300 500 nAdc

Forward Voltage

(IF = 1.0 mAdc)

V

F

− 0.28 0.37 Vdc

25°C

125°C

85°C

TA = 150°C

0 0.05

VF, FORWARD VOLTAGE (VOLTS)

0.1

10

1.0

0.1

85°C

10

0

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001
5

0

VR, REVERSE VOLTAGE (VOLTS)

0.5

0

C

T

, CAPACITANCE (pF)

2.0 4.0

I

F

, FORWARD CURRENT (mA)

Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse

Voltage

Figure 3. Typical Capacitance

−40 °C25°C

I

R

, REVERSE CURRENT (μA)

−55 °C

150 °C

125 °C

1000

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5 10 15 20 25 30 35

1.0

1.5

2.0

2.5

3.0

6.0 8.0 10 12 14 16 18

100