© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 3
1 Publication Order Number:
RB751S40T1/D
RB751S40T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage − 0.28 V (Typ) @ I
F
= 1.0 mAdc
• Low Reverse Current
• Lead−Free Plating
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Reverse Voltage V
RM
40 V
Reverse Voltage V
R
30 V
Forward Continuous Current (DC) I
F
30 mA
Peak Forward Surge Current I
FSM
500 mA
ESD Rating: Class 1C per Human Body Model
Class A per Machine Model
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
635 °C/W
Junction and Storage
Temperature Range
TJ, T
stg
−55 to +150 °C
1. FR−5 Minimum Pad.
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
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SOD−523
CASE 502
PLASTIC
5E = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
1
2
5E MG
G
12
Device Package Shipping
†
ORDERING INFORMATION
RB751S40T1 SOD−523 4000/Tape & Reel
RB751S40T1G SOD−523
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
查询RB751S40T1G供应商
RB751S40T1
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2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V
(BR)R
30 − − V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
− 2.0 2.5 pF
Reverse Leakage
(VR = 30 V)
I
R
− 300 500 nAdc
Forward Voltage
(IF = 1.0 mAdc)
V
F
− 0.28 0.37 Vdc
25°C
125°C
85°C
TA = 150°C
0 0.05
VF, FORWARD VOLTAGE (VOLTS)
0.1
10
1.0
0.1
85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5
0
VR, REVERSE VOLTAGE (VOLTS)
0.5
0
C
T
, CAPACITANCE (pF)
2.0 4.0
I
F
, FORWARD CURRENT (mA)
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
−40 °C25°C
I
R
, REVERSE CURRENT (μA)
−55 °C
150 °C
125 °C
1000
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5 10 15 20 25 30 35
1.0
1.5
2.0
2.5
3.0
6.0 8.0 10 12 14 16 18
100
RB751S40T1
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3
PACKAGE DIMENSIONS
SOD−523
CASE 502−01
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
−T−
SEATING
PLANE
B
A
−X−
−Y−
D 2 PL
T
M
0.08 (0.003) X Y
C
S
J
K
DIM MIN NOM MAX
MILLIMETERS
A 1.10 1.20 1.30
B 0.70 0.80 0.90
C 0.50 0.60 0.70
D 0.25 0.30 0.35
J 0.07 0.14 0.20
K 0.15 0.20 0.25
S 1.50 1.60 1.70
0.043 0.047 0.051
0.028 0.032 0.035
0.020 0.024 0.028
0.010 0.012 0.014
0.0028 0.0055 0.0079
0.006 0.008 0.010
0.059 0.063 0.067
MIN NOM MAX
INCHES
12
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.40
0.0547
ǒ
mm
inches
Ǔ
SCALE 10:1
RB751S40T1
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4
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RB751S40T1/D
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