ON Semiconductor NZL5V6ATT1 Technical data
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NZL5V6ATT1
SC75 Dual Common Anode
Zener for ESD Protection
This dual monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its dual junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Specification Features
• SC−75 Package Allows Two Separate Unidirectional Configurations
• Low Leakage < 1 A @ 3 Volt
• Breakdown Voltage: 5.3−5.9 Volt @ 1 mA
• Low Capacitance (40 pF typical between terminals)
• ESD Protection Meeting IEC61000−4−2
Mechanical Characteristics
• Void Free, Transfer−Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
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3
ANODE
3
1
SC−75
CASE 463
STYLE 4
MARKING DIAGRAM
56
CATHODE
1
2
CATHODE
2
56 = Device Marking
ORDERING INFORMATION
Device Package Shipping
NZL5V6ATT1 SC−75 3000/Tape & Reel
Semiconductor Components Industries, LLC, 2002
February, 2001 − Rev. 1
1 Publication Order Number:
NZL5V6ATT1/D
NZL5V6ATT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
V
V
I
PP
V
RWM
I
V
I
I
V
Z
I
ZK
Z
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
C
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
R
Breakdown Voltage @ I
BR
Test Current
T
Maximum Temperature Coefficient of V
BR
Forward Current
F
Forward Voltage @ I
F
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
MAXIMUM RATINGS (T
Steady State Power − 1 Diode (Note 1) P
Maximum Junction Temperature T
Operating Junction and Storage Temperature Range TJ T
ESD Discharge IEC61000−4−2, Air Discharge
Lead Solder Temperature (10 seconds duration) T
Parameter
PP
T
BR
F
ZT
ZK
= 25°C unless otherwise noted)
A
Characteristic
IEC61000−4−2, Contact Discharge
RWM
I
I
F
V
VCV
BR
RWM
I
V
R
F
I
T
I
PP
V
Uni−Directional TVS
Symbol Value Unit
150 mW
150 °C
−55 to +150 °C
15
kV
8
260 °C
Jmax
V
PP
D
stg
L
ELECTRICAL CHARACTERISTICS
Typical
Breakdown Voltage
V
@ 1 mA (Volts)
BR
Leakage Current
I
@ VRM = 3.0 V
RM
Device Min Nom Max (A) (pF) (V)
NZL5V6 5.3 5.6 5.9 1.0 40 1.25
1. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR−4 board with min pad.
300
250
200
100
90
80
70
t
r
60
150
50
40
100
50
, POWER DISSIPATION (mW)
D
P
0
0 25 50 75 100 125 150 175
30
20
% OF PEAK PULSE CURRENT
10
0
t
p
0 20406080
TEMPERATURE (°C)
Figure 1. Steady State Power Derating Curve
Figure 2. 8 X 20 s Pulse Waveform
Capacitance
@ 0 V Bias
@ 1 MHz
PEAK VALUE I
PULSE WIDTH (tp) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s
HALF VALUE I
t, TIME (s)
RSM
@ 8 s
V
/2 @ 20 s
RSM
Max
@ IF = 10 mA
F
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