ON Semiconductor NUP4302MR6 Technical data

查询NUP4302MR6供应商

NUP4302MR6

Schottky Diode Array for
Four Data Line
ESD Protection

The NUP4302MR6 is designed to protect high speed data line

interface from ESD, EFT and lighting.

http://onsemi.com

Features

• Very Low Forward Voltage Drop

• Fast Switching

• PN Junction Guard Ring for Transient and ESD Protection

• ESD Rating of Class 3B (Exceeding 16 kV) per Human Body Model

and Class C (Exceeding 400 V) per Machine Model

• IEC 61000−4−2 Level 4 ESD Protection

• Flammability Rating: UL 94 V−0

Applications

• Ultra High−Speed Switching

• USB 1.1 and 2.0 Power and Data Line Protection

• Digital Video Interface (DVI)

• Monitors and Flat Panel Displays

PIN CONFIGURATION

AND SCHEMATIC

I/O 1

GND 2

1/O 3

MARKING DIAGRAM

1

TSOP−6

CASE 318G

PLASTIC

STYLE 12

67 = Specific Device Code

M

= Date Code

ORDERING INFORMATION

Device Package Shipping

6 I/O

5 V

CC

4 I/O

M

67

1

†

 Semiconductor Components Industries, LLC, 2004

December, 2004 − Rev. 2

NUP4302MR6T1 TSOP−6 3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

NUP4302MR6/D

NUP4302MR6

MAXIMUM RATINGS (T

= 25°C unless otherwise noted)

J

Rating Symbol Value Unit

Peak Reverse Breakdown Voltage V

Forward Power Dissipation (TA = 25°C) P

Forward Continuous Current I

Junction Operating Temperature T

Storage Temperature Range T

BR

F

F

J

stg

30 V

225 mW

200 mA

−55 to +125 °C

−55 to +150 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

J

Parameter Symbol Conditions Min Typ Max Unit

Reverse Breakdown Voltage V

Reverse Leakage I

Forward Voltage V

Forward Voltage V

Forward Voltage V

Forward Voltage V

Total Capacitance C

Reverse Recovery Time t

IR = 100 A

BR

VR = 25 V 30

R

IF = 0.1 mAdc 0.28 V

F

IF = 1.0 mAdc 0.35 V

F

IF = 10 mAdc 0.45 V

F

IF = 100 mAdc 1.00 V

F

VR = 0 V, f = 1.0 MHz, I/O to Ground

T

VR = 0 V, f = 1.0 MHz, I/O to I/O

IF = IR = 10 mA, I

rr

= 1.0 mA (Figure 1) 5.0 ns

R(REC)

30 V

28
18

A

pF

+10 V

50  OUTPUT

PULSE

GENERATOR

820 

2 k

100 H

0.1 F

I

F

0.1 F
t

t

r

p

t

I

F

10%

DUT

50  INPUT

SAMPLING

OSCILLOSCOPE

V

90%

R

INPUT SIGNAL

I

R

(IF = IR = 10 mA; measured

Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so I
Notes: 3. tp » t

rr

is equal to 10 mA.

R(peak)

Figure 1. Recovery Time Equivalent Test Circuit

t

rr

i

R(REC)

OUTPUT PULSE

at i

R(REC)

= 1 mA)

t

= 1 mA

http://onsemi.com

2