ON Semiconductor NUP4301MR6T1 Technical data
查询NUP4301MR6T1供应商
NUP4301MR6T1
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
NUP4301MR6T1 is a MicroIntegration device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
• Low Capacitance (1.5 pf Maximum Between I/O Lines)
• Single Package Integration Design
• Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
• Protection for IEC61000-4-2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
• Ensures Data Line Speed and Integrity
• Fewer Components and Less Board Space
• Direct the Transient to Either Positive Side or to the Ground
Applications
• USB 1.1 and 2.0 Data Line Protection
• T1/E1 Secondary IC Protection
• T3/E3 Secondary IC Protection
• HDSL, IDSL Secondary IC Protection
• Video Line Protection
• Microcontroller Input Protection
• Base Stations
2
• I
C Bus Protection
http://onsemi.com
PIN CONFIGURATION
AND SCHEMATIC
64
6 I/O
5 V
4 I/O
d
I/O 1
2
V
N
1/O 3
4
5
6
2
1
TSOP-6
CASE 318F
PLASTIC
ORDERING INFORMATION
Device Package Shipping
MARKING DIAGRAM
3
64 = Specific Device Code
d
= Date Code
P
MAXIMUM RATINGS (Each Diode) (T
Rating
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
Repetitive Peak Reverse Voltage V
Average Rectified Forward
Current (Note 1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current I
Non-Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 S
1. FR-5 = 1.0 0.75 0.062 in.
Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 2
= 25°C unless otherwise noted)
J
Symbol Value Unit
R
F
FM(surge)
RRM
I
F(AV)
FRM
I
FSM
70 Vdc
200 mAdc
500 mAdc
70 V
715 mA
450 mA
A
2.0
1.0
0.5
1 Publication Order Number:
NUP4301MR6T1 TSOP-6 3000/Tape & Reel
NUP4301MR6T1/D
NUP4301MR6T1
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance Junction-to-Ambient R
Lead Solder Temperature
Maximum 10 Seconds Duration
Junction Temperature T
Storage Temperature T
JA
T
L
J
stg
556 °C/W
260 °C
-40 to +85 °C
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Each Diode)
J
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
= 100 A) V
(BR)
Reverse Voltage Leakage Current (VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(V
= 70 Vdc, TJ = 150°C)
R
Capacitance (between I/O pins)
(VR = 0 V, f = 1.0 MHz)
Capacitance (between I/O pin and ground)
(VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 1.0 mAdc)
(IF = 10 mAdc)
(I
= 50 mAdc)
F
= 150 mAdc)
(I
F
1. FR-5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Symbol Min Typ Max Unit
(BR)
I
R
C
C
V
D
D
F
70 - - Vdc
-
-
-
-
-
-
2.5
30
50
Adc
- 0.8 1.5 pF
- 1.6 3 pF
-
-
-
-
-
-
-
-
715
855
1000
1250
mV
dc
http://onsemi.com
2
Loading...