ON Semiconductor NUP4201DR2 Technical data

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NUP4201DR2

Advance Information

Low Capacitance Surface
Mount TVS for High-Speed
Data Interfaces

The NUP4201DR2 transient voltage suppressor is designed to
protect equipment attached to high speed communication lines from
ESD, EFT, and lighting.

Features:

• SO–8 Package

• Peak Power – 500 Watts 8 x 20 S

• ESD Rating:

IEC 61000–4–2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000–4–4 (EFT) 40 A (5/50 ns)
IEC 61000–4–5 (lighting) 23 (8/20 s)

• UL Flammability Rating of 94V–0

T ypical Applications:

• High Speed Communication Line Protection

• USB Power and Data Line Protection

• Video Line Protection

• Base Stations

• HDSL, IDSL Secondary IC Side Protection

• Microcontroller Input Protection

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SO–8 LOW CAPACITANCE

VOLTAGE SUPPRESSOR

500 WATTS PEAK POWER

6 VOLTS

PIN CONFIGURATION

AND SCHEMATIC

I/O 1 1
REF 1 2
REF 1 3

I/O 2 4

8 REF 2
7 I/O 4
6 I/O 3
5 REF 2

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation

8 x 20 S @ T

Junction and Storage

Temperature Range

Lead Solder Temperature –

Maximum 10 Seconds Duration

1. Non–repetitive current pulse 8 x 20 S exponential decay waveform

This document contains information on a new product. Specifications and information
herein are subject to change without notice.

= 25°C (Note 1)

A

P

TJ, T

T

stg

500 W

–55 to

+150

260 °C

pk

L

°C

8

1

SO–8

CASE 751

PLASTIC

MARKING DIAGRAM

P4201
LYW

P4201 = Device Code
L = Location Code
Y = Year
W = Work Week

ORDERING INFORMATION

Device Package Shipping

NUP4201DR2 SO–8 2500/Tape & Reel

 Semiconductor Components Industries, LLC, 2002

April, 2002 – Rev. 0

1 Publication Order Number:

NUP4201DR2/D

NUP4201DR2

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage @ It = 1.0 mA V
Reverse Leakage Current @ V

= 5.0 Volts I

RWM

Maximum Clamping Voltage @ IPP = 1.0 A, 8 x 20 S V
Maximum Clamping Voltage @ IPP = 10 A, 8 x 20 S V

BR
R

C
C

Between I/O Pins and Ground @ DC Bias = 0 V, 1.0 MHz Capacitance – 5.0 10 pF
Between I/O Pins and I/O @ DC Bias = 0 V, 1.0 MHz Capacitance – 2.5 5.0 pF

6.0 – – V
N/A – 10 A
N/A – 9.8 V
N/A – 12 V

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol

I

PP

V

C

V

RWM

I

R

V

BR

I

T

V

BR

I

F

V

F

Z

ZT

I

ZK

Z

ZK

Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Maximum Temperature Coefficient of V
Forward Current
Forward Voltage @ I
Maximum Zener Impedance @ I
Reverse Current
Maximum Zener Impedance @ I

Parameter

PP

RWM

T

BR

F

ZT

ZK

VCV

V

RWM

BR

Uni–Directional TVS

I

I

F

I

V

R

F

I

T

I

PP

V

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2

NUP4201DR2

TYPICAL CHARACTERISTICS

9
8
7
6
5
4
3
2

, REVERSE BREAKDOWN (V)

Z

V

1
0

–100 0

–50

50 150

T, TEMPERATURE (°C)

100 200

Figure 1. Reverse Breakdown versus

Temperature

100

t

r

90
80
70
60
50
40
30
20

% OF PEAK PULSE CURRENT

10

0

0204060

PEAK VALUE I

t

P

@ 8 s

RSM

PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s

HALF VALUE I

t, TIME (s)

/2 @ 20 s

RSM

Figure 3. 8 × 20 s Pulse Waveform

80

8
7
6
5
4
3
2

, REVERSE LEAKAGE (A)

R

I

1
0

–100 –50 50 100

0 150

T, TEMPERATURE (°C)

Figure 2. Reverse Leakage versus

Temperature

35

30

25

20

15

10

, CLAMPING VOLTAGE (V)

C

V

5

0

0204060

10 30 50 70 90

I

, PEAK PULSE CURRENT (A)

PP

Figure 4. Clamping Voltage versus Peak Pulse

Current

200

80

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