ON Semiconductor NUP4108W5 Technical data
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NUP4108W5
Low Capacitance
Quad Array for
ESD Protection
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for four separate lines using only one package. This
device is ideal for situations where board space is at a premium.
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Features
• ESD Protection: IEC61000−4−2: Level 4
MILSTD 883C − Method 3015−6: Class 3
• Four Separate Unidirectional Configurations for Protection
• Low Leakage Current < 1 mA
• Power Dissipation: 380 mW
• Small SC−88A SMT Package
• Low Capacitance
• This is a Pb−Free Device
Benefits
• Provides Protection for ESD Industry Standards: IEC 61000, HBM
• Minimize Power Consumption of the System
• Minimize PCB Board Space
Typical Applications
• Instrumentation Equipment
• Serial and Parallel Ports
• Microprocessor Based Equipment
• Notebooks, Desktops, Servers
• Cellular and Portable Equipment
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SC−88A/SOT−323
CASE 419A
MARKING DIAGRAM
45
RY M
G
132
RY = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device Package Shipping
NUP4108W5T2G SC−88A
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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†
3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 2
1 Publication Order Number:
NUP4108W5/D
NUP4108W5
MAXIMUM RATINGS (T
Peak Power Dissipation
= 25°C unless otherwise noted)
A
Rating
Symbol Value Unit
P
PK
20 W
8 20 msec Double Exponential Waveform (Note 1)
Steady State Power − 1 Diode (Note 2) P
Thermal Resistance −
R
Junction−to−Ambient
Above 25°C, Derate
Operating Junction Temperature Range T
Storage Temperature Range T
Lead Solder Temperature − Maximum 10 Seconds Duration T
q
stg
D
JA
J
L
380 mW
327
3.05
°C/W
mW/°C
−40 to +125 °C
−55 to +150 °C
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non−repetitive current pulse per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR4 board with min pad.
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
NUP4108W5
Characteristic Symbol Min Typ Max Unit
Breakdown Voltage (IT = 1 mA) (Note 3) V
Leakage Current (V
= 5.0 V) I
RWM
Clamping Voltage 1 (IPP = 1.6 A, 8 20 msec Waveform)
Maximum Peak Pulse Current (8 20 msec Waveform)
Junction Capacitance− (VR = 0 V, f = 1 MHz)
− (VR = 3.0 V, f = 1 MHz)
3. VBR is measured at pulse test current IT.
BR
R
V
C
I
PP
C
J
6.4 6.8 7.1 V
− − 1.0
− − 13 V
− − 1.6 A
−
−
12
6.7
15
9.5
mA
pF
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