ON Semiconductor NUP4103FC Technical data

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NUP4103FC

Four Channel ESD Array

This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive portable equipment and other
applications. Its integrated design provides very effective and reliable
protection for four (4) separate lines using only one package. These
devices are ideal for situations where board space is a premium.

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Features

• Unidirectional, Quad ESD Protection

• Ultra-small Flip Chip Packaging (0.95 mm x 1.33 mm)

• Compliance with IEC61000-4-2 (Level 4) Requirements

• Maximum Leakage Current of 100 nA at 3.3 V

Benefits

• Protects Four Data Lines from ESD while Reducing Component

Count

• Small Package Saves On PCB Real Estate

• Provides Protection for ESD Industry Standards, IEC 61000, HBM

and MM

• Low Leakage Capability Minimizes Power Loss in the System

Applications

• ESD Protection for Portable Equipment

• Cell Phones

• MP3 Players

• PDAs

MAXIMUM RATINGS (T

Rating Symbol Value Unit

ESD Discharge IEC61000-4-2,

- Air Discharge

- Contact Discharge
Human Body Model
Machine Model

Junction Temperature T
Operating Ambient Temperature

Range

Storage Temperature Range T

= 25°C, unless otherwise specified)

J

V

PP

J

T

A

STG

30
30
16

1.6

150 °C

-40 to +85 °C

-55 to +150 °C

kV

CIRCUIT DESCRIPTION

A1 C1

B2

A3 C3

5 PIN FLIP CHIP CSP

CASE 766AB

PLASTIC

TOP VIEW

(Bumps Down)

12 12

33

A

B

C

DEVICE MARKING

ED

BOTTOM VIEW

(Bumps Up)

A

B

C

 Semiconductor Components Industries, LLC, 2003

June, 2003 - Rev. 0

E = Specific Device Code
D = Month Code

ORDERING INFORMATION

Device Package Shipping

NUP4103FCT1 Flip Chip 3000/Tape & Reel

1 Publication Order Number:

NUP4103FC/D

NUP4103FC

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Stand-Off Voltage V
Breakdown Voltage V
Leakage Current I
Junction Capacitance C

= 25°C unless otherwise specified)

J

Symbol Conditions Min Typ Max Unit

I

RWM

BR
R

J

= 10 A (Note 1) 5.5 V

RWM

IT = 1.0 mA (Note 2) 6.0 7.0 8.0 V
VRM = 3.3 V per line 100 nA

VR = 2.5 V, f = 1 MHz 30 pF

1. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.

is measured at pulse test current IT.

2. V

BR

TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise specified)

50

45

40

35

30

C, Capacitance (pF)

25

100.0E-9

10.0E-9

1.0E-9

, Leakage Current (A)

100.0E-12

R

I

) which should be equal or greater than the DC

RWM

20

0

12345

, Reverse Voltage (V)

V

R

Figure 1. Reverse V oltage vs Junction Capacitance

10.0E-12

-40

-15

10

35 60 85

T, Temperature (°C)

Figure 2. Reverse Leakage Current

vs Junction T emperature

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