ON Semiconductor NUP2301MW6T1 Technical data
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NUP2301MW6T1
Low Capacitance Diode
Array for ESD Protection in
Two Data Lines
NUP2301MW6T1 is a MicroIntegration device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
• Low Capacitance (2.0 pf Maximum Between I/O Lines)
• Single Package Integration Design
• Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
• Protection for IEC61000−4−2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
• Ensures Data Line Speed and Integrity
• Fewer Components and Less Board Space
• Direct the Transient to Either Positive Side or to the Ground
• Pb−Free Package is Available
Applications
• T1/E1 Secondary IC Protection
• T3/E3 Secondary IC Protection
• HDSL, IDSL Secondary IC Protection
• Video Line Protection
• Microcontroller Input Protection
• Base Stations
2
• I
C Bus Protection
MAXIMUM RATINGS (Each Diode) (T
Rating Symbol Value Unit
Reverse Voltage V
Forward Current I
Peak Forward Surge Current I
Repetitive Peak Reverse Voltage V
Average Rectified Forward
Current (Note 1)
(Averaged over any 20 ms Period)
Repetitive Peak Forward Current I
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
= 25°C unless otherwise noted)
J
R
F
FM(surge)
RRM
I
F(AV)
FRM
I
FSM
70 Vdc
200 mAdc
500 mAdc
70 V
715 mA
450 mA
2.0
1.0
0.5
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PIN CONFIGURATION
AND SCHEMATIC
V
N
I/O
V
P
4
5
6
3
2
1
SC−88
CASE 419B
STYLE 23
1
2
3
MARKING DIAGRAM
68 = Specific Device Code
d
= Date Code
N/C
6
5
54I/O
N/C
d
68
ORDERING INFORMATION
Device Package Shipping
NUP2301MW6T1 SC−88 3000/Tape & Reel
NUP2301MW6T1G SC−88
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A
3000/Tape & Reel
†
Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 2
1 Publication Order Number:
NUP2301MW6T1/D
NUP2301MW6T1
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance Junction−to−Ambient
Lead Solder Temperature Maximum 10 Seconds Duration T
Junction Temperature T
Storage Temperature T
R
q
JA
L
J
stg
625 °C/W
260 °C
−55 to +150 °C
−55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Each Diode)
J
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
= 100 mA)
(BR)
Reverse Voltage Leakage Current (VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
Capacitance (between I/O pins) (VR = 0 V, f = 1.0 MHz) C
Capacitance (between I/O pin and ground) (VR = 0 V, f = 1.0 MHz) C
Forward Voltage (IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
2. FR−5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
100
TA = 85°C
10
1.0
10
TA = −40°C
0.1
V
(BR)
I
R
V
70 − − Vdc
−
−
−
D
D
F
− 1.0 2.0 pF
− 1.6 3 pF
−
−
−
−
−
−
−
−
−
−
−
2.5
30
50
715
855
1000
1250
mAdc
mV
dc
TA = 150°C
TA = 125°C
TA = 85°C
1.0
, FORWARD CURRENT (mA)
F
I
0.1
0.2 0.4
Figure 1. Forward Voltage Figure 2. Leakage Current
TA = 25°C
0.6 0.8 1.0
VF, FORWARD VOLTAGE (V)
1.75
1.5
1.25
1.0
, DIODE CAPACITANCE (pF)
D
C
0.75
0
TA = 55°C
0.01
, REVERSE CURRENT (mA)
R
I
TA = 25°C
0.001
1.2
0
10 20 30 40
VR, REVERSE VOLTAGE (V)
2468
VR, REVERSE VOLTAGE (V)
Figure 3. Capacitance
50
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2
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