ON Semiconductor NUP2201MR6 Technical data

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NUP2201MR6

Low Capacitance TSOP−6
Diode−TVS Array for High
Speed Data Lines
Protection

The NUP2201MR6 transient voltage suppressor is designed to

protect high speed data lines from ESD, EFT, and lighting.

Features:

• Low Capacitance (3 pF Maximum Between I/O Lines)

• ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model

and Class C (Exceeding 400 V) per Machine Model

• Protection for the Following IEC Standards:

IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000−4−4 (EFT) 40 A (5/50 ns)
IEC 61000−4−5 (lighting) 23 A (8/20 s)

• UL Flammability Rating of 94 V−0

T ypical Applications:

• High Speed Communication Line Protection

• USB 1.1 and 2.0 Power and Data Line Protection

• Digital Video Interface (DVI)

• Monitors and Flat Panel Displays

• Pb−Free Package May be Available. The G−Suffix Denotes a

Pb−Free Lead Finish

MAXIMUM RATINGS (T

Rating

Peak Power Dissipation
8 x 20 S @ T

Operating Junction Temperature Range T
Storage Temperature Range T
Lead Solder Temperature −

Maximum (10 Seconds)
Human Body Model (HBM)

Machine Model (MM)
IEC 61000−4−2 Air (ESD)
IEC 61000−4−2 Contact (ESD)

1. Non−repetitive current pulse per Figure 1 (Pin 5 to Pin 2)

= 25°C (Note 1)

A

= 25°C unless otherwise noted)

J

Symbol Value Unit

P

pk

J

stg

T

L

ESD 16000

500 W

−40 to +125 °C

−55 to +150 °C
235 °C

V

400

20000
20000

http://onsemi.com

TSOP−6 LOW CAPACITANCE

DIODE TVS ARRAY

500 WATTS PEAK POWER

6 VOLTS

PIN CONFIGURATION

AND SCHEMATIC

I/O 1

V

2

N

N/C 3

6

TSOP−6

CASE 318G

PLASTIC

MARKING DIAGRAM

M

62

62 = Specific Device Code

M

= Date Code

6 I/O

5 V

P

4 N/C

1

 Semiconductor Components Industries, LLC, 2003

November, 2003 − Rev. 1

ORDERING INFORMATION

Device Package Shipping

NUP2201MR6T1 TSOP−6 3000/Tape & Reel
NUP2201MR6T1G TSOP−6 3000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

NUP2201MR6/D

†

NUP2201MR6

ELECTRICAL CHARACTERISTICS (T

Parameter

Reverse Working Voltage V
Breakdown Voltage V
Reverse Leakage Current I
Clamping Voltage V
Clamping Voltage V
Maximum Peak Pulse Current I
Junction Capacitance C
Junction Capacitance C

Symbol Conditions Min Typ Max Unit

=25°C unless otherwise specified)

J

RWM

(Note 2) 5.0 V
IT=1 mA, (Note 3) 6.0 V

BR

V

R

C
C

PP

J
J

= 5 V 5.0 A

RWM

IPP = 5 A (Note 4) 12.5 V
IPP = 8 A (Note 4) 20 V
8x20 s Waveform 25 A
VR = 0 V, f=1 MHz between I/O Pins and GND 3.0 5.0 pF
VR = 0 V, f=1 MHz between I/O Pins 1.5 3.0 pF

2. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.

is measured at pulse test current IT.

3. V

BR

4. Non−repetitive current pulse per Figure 1 (Pin 5 to Pin 2)

TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

100

90

80

70

60

50

40

30

20

PEAK POWER DISSIPATION (%)

10

0

0 25 50 75 100 125 150 175 200

, AMBIENT TEMPERATURE (°C)

T

A

Figure 1. Pulse Derating Curve

100

t

r

90
80
70
60
50
40
30
20

% OF PEAK PULSE CURRENT

10

0

0204060

Figure 2. 8 × 20 s Pulse Waveform

), which should be equal or greater than the DC

RWM

PEAK VALUE I

RSM

@ 8 s

PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 s

HALF VALUE I

t

P

/2 @ 20 s

RSM

t, TIME (s)

80

5.0

4.5

4.0

3.5

3.0

I/O−Ground

2.5

2.0

1.5

I/O lines

1.0

JUNCTION CAPACITANCE (pF)

0.5

0.0
01

V

2345

, REVERSE VOLTAGE (V)

BR

Figure 3. Junction Capacitance vs Reverse V oltage

http://onsemi.com

20
18
16
14
12
10

8
6
4

CLAMPING VOLTAGE (V)

2
0

010

20 30 40 50

PEAK PULSE CURRENT (A)

Figure 4. Clamping Voltage vs. Peak Pulse Current

(8 x 20 s Waveform)

2