ON Semiconductor NUP1105L Technical data

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NUP1105L
Advance Information
Single Line CAN/LIN Bus Protector
Features
SOT−23 Package Allows One Separate Bidirectional Configuration
350 W Peak Power Dissipation per Line (8 x 20 sec Waveform)
Low Reverse Leakage Current (< 100 nA)
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 40 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 8.0 A (8/20 s)
ISO 7637−1, Nonrepetitive EMI Surge Pulse TBD
ISO 7637−3, Repetitive Electrical Fast Transient (EFT) TBD
EMI Surge Pulses
Flammability Rating UL 94 V−0
Pb−Free Packages are Available
Applications
Automotive Electronics
LIN BusSingle Line CAN
Industrial Control Networks
Smart Distribution Systems (SDS)DeviceNet
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SOT−23 BIDIRECTIONAL VOLTAGE SUPPRESSOR
350 W PEAK POWER
1
3
2
PIN 1. ANODE
2. ANODE
3. CATHODE
MARKING DIAGRAM
27DM
1
SOT−23 CASE 318 STYLE 27
27D = Device Code M = Date Code
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. P0
1 Publication Order Number:
ORDERING INFORMATION
Device Package Shipping
NUP1105LT1 SOT−23 3000/Tape & Reel NUP1105LT1G SOT−23
(Pb−Free) NUP1105LT3 SOT−23 10000/Tape & Reel NUP1105LT3G SOT−23
(Pb−Free) †For information on tape and reel specifications,
including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
3000/Tape & Reel
10000/Tape & Reel
NUP1105L/D
NUP1105L
MAXIMUM RATINGS (T
Symbol
PPK Peak Power Dissipation
= 25°C, unless otherwise specified)
J
Rating Value Unit
W
8 x 20s Double Exponential Waveform (Note 1) 350
T
Operating Junction Temperature Range −40 to 125 °C
J
T
Storage Temperature Range −55 to 150 °C
J
T
Lead Solder Temperature (10 s) 260 °C
L
ESD Human Body model (HBM)
Machine Model (MM) IEC 61000−4−2 Specification (Contact)
16
400
30
kV
V
kV
Maximum ratings are those values beyond which device damage can occur . Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not im­plied, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T
Symbol
V
V
Reverse Working Voltage (Note 2) 24 V
RWM
Breakdown Voltage IT = 1 mA (Note 3) 25.7 28.4 V
BR
I
Reverse Leakage Current V
R
V
Clamping Voltage IPP = 5 A (8 x 20 s Waveform) (Note 4) 40 V
C
V
Clamping Voltage IPP = 8 A (8 x 20 s Waveform) (Note 4) 44 V
C
I
Maximum Peak Pulse Current 8 x 20 s Waveform (Note 4) 8.0 A
PP
CJ Capacitance VR = 0 V, f = 1 MHz (Anode to GND)
2. TVS devices are normally selected according to the working peak reverse voltage (V or continuous peak operating voltage level.
is measured at pulse test current IT.
3. V
BR
4. Pulse waveform per Figure 1.
Parameter Test Conditions Min Typ Max Unit
= 25°C, unless otherwise specified)
J
= 24 V 15 100 nA
RWM
VR = 0 V, f = 1 MHz (Anode to Anode)
), which should be equal or greater than the DC
RWM
60 30
pF
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2
NUP1105L
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
110 100
90 80 70
c−t
WAVEFORM PARAMETERS t
= 8 s
r
= 20 s
t
d
60 50
td = IPP/2
40 30 20
% OF PEAK PULSE CURRENT
10
0
0 5 15 25
10 20
t, TIME (s)
Figure 1. Pulse Waveform, 8 × 20 s
45 40 35 30 25
, (A)
R
I
20 15 10
5 0
−60 −10 40 90 140 190
12.0 PULSE WAVEFORM
10.0
8 x 20 s per Figure 1
8.0
6.0
4.0
, PEAK PULSE CURRENT (A)
PP
I
2.0
30
0.0 25 40
Figure 2. Clamping Voltage vs Peak Pulse Current
30
29
28
, (V)
27
Z
V
26
25
24
−60 −10 40 90 140 190
30 35 45 50
, CLAMPING VOLTAGE (V)
V
C
V
Z
TEMPERATURE (°C)
Figure 3. T ypical Leakage vs. Temperature
60
25°C
50
40
30
20
CAPACITANCE (pF)
10
0
0 5 10 15 20 25
Figure 5. Capacitance vs. V
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V
TEMPERATURE (°C)
Figure 4. T ypical VZ @ 1.0 mA vs. T emperature
BIAS
BIAS
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NUP1105L
APPLICATIONS SECTION
The NUP1105L provides a transient voltage suppression solution for the LIN data communication bus. The NUP1105L is a dual bidirectional TVS device in a compact SOT−23 package. This device is based on Zener technology that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and ESD. The NUP1105L has been tested to EMI and ESD levels that exceed the specifications of popular high speed LIN networks.
=
V
Battery
8 to 18 V
LIN Transceiver
Voltage
Regulator
Receiver
Transmitter
V
= 5 V
OUT
LIN Bus
NUP1105L
The NUP1105L device can be used to provide transcient voltage suppression for a single data line CAN system. Figure 7 provides an example of a single data line CAN protection circuit.
CAN
Transceiver
Figure 7. High−Speed and Fault Tolerant CAN TVS
CAN_Data_Line
NUP1105L
Protection Circuit
Figure 6. LIN Transceiver
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4
NUP1105L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A
L
3
1
2
S
B
GV
C
D
H
K
J
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08.
DIMAMIN MAX MIN MAX
STYLE 27:
PIN 1. CATHODE
INCHES
0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60
2. CATHODE
3. CATHODE
MILLIMETERS
SOLDERING FOOTPRINT*
0.95
SCALE 10:1
0.037
2.0
0.079
mm
inches
0.95
0.037
0.9
0.035
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NUP1105L
SDS is a registered trademark of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NUP1105L/D
6
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