ON Semiconductor NUP1105L Technical data
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NUP1105L
Advance Information
Single Line CAN/LIN
Bus Protector
The NUP1105L has been designed to protect LIN and single line
CAN transceivers from ESD and other harmful transient voltage
events. This device provides bidirectional protection for the data line
with a single SOT−23 package, giving the system designer a low cost
option for improving system reliability and meeting stringent EMI
requirements.
Features
• SOT−23 Package Allows One Separate Bidirectional Configuration
• 350 W Peak Power Dissipation per Line (8 x 20 sec Waveform)
• Low Reverse Leakage Current (< 100 nA)
• IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 40 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 8.0 A (8/20 s)
• ISO 7637−1, Nonrepetitive EMI Surge Pulse TBD
• ISO 7637−3, Repetitive Electrical Fast Transient (EFT) TBD
EMI Surge Pulses
• Flammability Rating UL 94 V−0
• Pb−Free Packages are Available
Applications
• Automotive Electronics
♦ LIN Bus
♦ Single Line CAN
• Industrial Control Networks
♦ Smart Distribution Systems (SDS)
♦ DeviceNet
http://onsemi.com
SOT−23 BIDIRECTIONAL
VOLTAGE SUPPRESSOR
350 W PEAK POWER
1
3
2
PIN 1. ANODE
2. ANODE
3. CATHODE
MARKING
DIAGRAM
27DM
1
SOT−23
CASE 318
STYLE 27
27D = Device Code
M = Date Code
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
Semiconductor Components Industries, LLC, 2004
September, 2004 − Rev. P0
1 Publication Order Number:
ORDERING INFORMATION
Device Package Shipping
NUP1105LT1 SOT−23 3000/Tape & Reel
NUP1105LT1G SOT−23
(Pb−Free)
NUP1105LT3 SOT−23 10000/Tape & Reel
NUP1105LT3G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
3000/Tape & Reel
10000/Tape & Reel
†
NUP1105L/D
NUP1105L
MAXIMUM RATINGS (T
Symbol
PPK Peak Power Dissipation
= 25°C, unless otherwise specified)
J
Rating Value Unit
W
8 x 20s Double Exponential Waveform (Note 1) 350
T
Operating Junction Temperature Range −40 to 125 °C
J
T
Storage Temperature Range −55 to 150 °C
J
T
Lead Solder Temperature (10 s) 260 °C
L
ESD Human Body model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
16
400
30
kV
V
kV
Maximum ratings are those values beyond which device damage can occur . Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T
Symbol
V
V
Reverse Working Voltage (Note 2) 24 V
RWM
Breakdown Voltage IT = 1 mA (Note 3) 25.7 28.4 V
BR
I
Reverse Leakage Current V
R
V
Clamping Voltage IPP = 5 A (8 x 20 s Waveform) (Note 4) 40 V
C
V
Clamping Voltage IPP = 8 A (8 x 20 s Waveform) (Note 4) 44 V
C
I
Maximum Peak Pulse Current 8 x 20 s Waveform (Note 4) 8.0 A
PP
CJ Capacitance VR = 0 V, f = 1 MHz (Anode to GND)
2. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
is measured at pulse test current IT.
3. V
BR
4. Pulse waveform per Figure 1.
Parameter Test Conditions Min Typ Max Unit
= 25°C, unless otherwise specified)
J
= 24 V 15 100 nA
RWM
VR = 0 V, f = 1 MHz (Anode to Anode)
), which should be equal or greater than the DC
RWM
60
30
pF
http://onsemi.com
2
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