ON Semiconductor NUF6406MN Technical data

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NUF6406MN

Low Capacitance 6 Line
EMI Filter with ESD
Protection

This device is a 6 line EMI filter array for wireless applications.
Greater than −30 dB attenuation is obtained at frequencies from
800 MHz to 2.4 GHz. It also offers ESD protection−clamping
transients from static discharges. ESD protection is provided across all
capacitors.

Features

• EMI Filtering and ESD Protection

• Integration of 30 Discrete Components

• Compliance with IEC61000−4−2 (Level 4)

> 8.0 kV (Contact)

• DFN Package, 1.35 x 3.0 mm

• Moisture Sensitivity Level 1

• ESD Ratings: Machine Model = C

Human Body Model = 3B

• This is a Pb−Free Device*

Benefits

• Reduces EMI/RFI Emissions on a Data Line

• Integrated Solution Offers Cost and Space Savings in a DFN Package

• Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass

Filter Response

• Integrated Solution Improves System Reliability

• Compatible Footprint to BGA or Flip−Chip Package

Applications

• EMI Filtering and ESD Protection for Data Lines

• Wireless Phones

• PDAs and Handheld Products

• Notebook Computers

• LCD Displays

4321

GND

65

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1

Cd Cd

2

Cd Cd

3

Cd Cd

4

Cd Cd

5

Cd Cd

6

Cd Cd

(Top View)

MARKING

12

1

DFN12

CASE 506AD

6406 = Specific Device Code
M

= Month
G = Pb−Free Package
(Note: Microdot may be in either location)

DIAGRAM

1

M

12

11

10

9

8

7

64
06

G

G

(Bottom View)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2005

June, 2005 − Rev. 2

9101112 8 7

1 Publication Order Number:

ORDERING INFORMATION

Device Package Shipping

NUF6406MNT1G DFN12

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD801 1/D.

3000 / Tape & Ree

NUF6406MN/D

†

NUF6406MN

MAXIMUM RATINGS (T

ESD Discharge IEC61000−4−2 Contact Discharge V
Operating Temperature Range T
Storage Temperature Range T
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) T

= 25°C unless otherwise noted)

J

Parameter

Symbol Value Unit

PP

OP

STG

L

8.0 kV

−40 to 85 °C

−55 to 150 °C
260 °C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously . If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (T

Parameter

Maximum Reverse Working Voltage V
Breakdown Voltage V
Leakage Current I
Resistance R

= 25°C unless otherwise noted)

J

Symbol Test Conditions Min Typ Max Unit

RWM

BR
R

A

IR = 1.0 mA 6.0 7.0 V

V

= 3.0 V 1.0

RWM

IR = 20 mA 85 100 115

5.0 V

A



Capacitance (Notes 1 and 2) Cd VR = 2.5 V, f = 1.0 MHz 13 16 pF
Cut−Off Frequency (Note 3) f

3dB

Above this frequency,

appreciable attenuation occurs

138 MHz

1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.

2. Total line capacitance is 2 times the Diode Capacitance (Cd).

3. 50  source and 50  load termination.

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