ON Semiconductor NTS4409N Technical data
NTS4409N
t
Small Signal MOSFET
25 V, 0.75 A, Single, N−Channel,
ESD Protection, SC−70/SOT−323
Features
• Advance Planar Technology for Fast Switching, Low R
• Higher Efficiency Extending Battery Life
• This is a Pb−Free Device
Applications
• Boost and Buck Converter
• Load Switch
• Battery Protection
DS(on)
V
(BR)DSS
25 V
http://onsemi.com
R
Typ ID Max
DS(on)
249 mW @ 4.5 V
299 mW @ 2.7 V
SC−70 (3−Leads)
0.75 A
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage V
Drain Current t < 5 s TA = 25°C I
Continuous Drain Curren
(Note 1)
Power Dissipation (Note 1) Steady State P
Power Dissipation (Note 1) t v 5 s P
Pulsed Drain Current
Operating Junction and Storage Temperature TJ,
Source Current (Body Diode) (Note 1) I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ESD Rating − Machine Model 250 V
= 25°C unless otherwise noted)
J
Rating Symbol Value Unit
25 V
"8.0 V
0.75 A
0.7
0.28 W
0.33 W
3.0 A
−55 to
+150
0.3 A
260 °C
A
°C
Steady
State
DSS
GS
T
I
I
DM
STG
T
TA = 25°C
TA = 75°C 0.6
tp = 10 ms
D
D
D
D
S
L
THERMAL RESISTANCE RATINGS
Rating Symbol Max Unit
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient − t v 5 s (Note 1)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
R
q
JA
R
q
JA
450
375
°C/W
Gate31
Drain
Source
2
Top View
MARKING DIAGRAM &
3
1
2
SC−70/SOT−323
CASE 419
STYLE 8
T4 = Device Code
W = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
3
Drain
T4 WG
G
1
Gate
2
Source
ORDERING INFORMATION
Device Package Shipping
NTS4409NT1G SOT−323
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
3000/Tape & Reel
†
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1 Publication Order Number:
NTS4409N/D
NTS4409N
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
J
Characteristic Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current I
Gate−to−Source Leakage Current I
V
(BR)DSS
V
(BR)DSS/TJ
DSS
GSS
V
GS
V
= 0 V,
GS
V
= 20 V
DS
V
= 0 V, V
DS
= 0 V, I
= 250 mA
D
T
J
T
J
T
J
= 8.0 V 100 nA
GS
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V
Negative Threshold Temperature
Coefficient
V
GS(TH)/TJ
Drain−to−Source On Resistance R
Forward Transconductance g
GS(TH)
DS(on)
FS
V
= VDS, ID = 250 mA
GS
V
= 4.5 V, I
GS
V
= 2.7 V, I
GS
V
= 4.5 V, I
GS
V
= 5.0 V, I
DS
= 0.6 A 249 350
D
= 0.2 A 299 400
D
= 1.2 A 260
D
= 0.5 A 0.5 S
D
CHARGES AND CAPACITANCES
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Threshold Gate Charge Q
Gate−to−Source Charge Q
Gate−to−Drain Charge Q
ISS
OSS
RSS
G(TOT)
G(TH)
GS
GD
V
= 0 V, f = 1.0 MHz,
GS
V
GS
V
DS
= 4.5 V, V
I
= 0.8 A
D
= 10 V
DS
= 15 V,
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time t
Rise Time t
Turn−Off Delay Time t
Fall Time t
d(ON)
r
d(OFF)
f
V
GS
I
D
= 4.5 V, V
= 0.7 A, R
DS
= 51 W
G
= 15 V,
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
I
S
= 0 V,
= 0.6 A
T
J
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
25 V
30 mV/°C
= 25°C 0.5 mA
= 70°C 2.0
= 125°C 5.0
0.65 1.5 V
−2.0 mV/°C
49 60
22.4 30
8.0 12
1.2 1.5
0.2
0.28 0.50
0.3 0.40
5.0 12
8.2 8.0
23 35
41 60
= 25°C 0.82 1.20 V
mW
pF
nC
ns
http://onsemi.com
2
Loading...