ON Semiconductor NTR1P02LT1 Technical data
查询NTR1P02LT1供应商
NTR1P02LT1
Power MOSFET
−20 V, −1.3 A, P−Channel
SOT−23 Package
These miniature surface mount MOSFETs low R
DS(on)
assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
• Low R
Provides Higher Efficiency and Extends Battery Life
DS(on)
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available
MAXIMUM RATINGS (T
Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V
Drain Current
− Continuous @ T
− Pulsed Drain Current (t
Total Power Dissipation @ TA = 25°C P
Operating and Storage Temperature Range TJ, T
Thermal Resistance − Junction−to−Ambient R
Maximum Lead Temperature for Soldering
Purposes, (1/8″ from case for 10 s)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
= 25°C unless otherwise noted)
J
Rating
= 25°C
A
≤ 10 s)
p
Symbol Value Unit
stg
−20 V
±12 V
−1.3
−4.0
400 mW
− 55 to
150
300 °C/W
260 °C
A
A
°C
DSS
I
I
DM
T
GS
D
D
JA
L
http://onsemi.com
R
(BR)DSS
−20 V 220 m
DS(on)
P−Channel
G
MARKING DIAGRAM/
PIN ASSIGNMENT
3
1
2
SOT−23
CASE 318
STYLE 21
Gate2Source
PO2 = Specific Device Code
W = Work Week
MAX
D
S
PO2W
1
3
Drain
ID MAXV
−1.3 A
Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 5
ORDERING INFORMATION
Device Package Shipping
NTR1P02L T1 SOT−23 3000 Tape & Reel
NTR1P02LT1G SOT−23
(Pb−Free)
NTR1P02L T3 SOT−23 10,000 Tape & Reel
NTR1P02LT3G SOT−23
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
3000 Tape & Reel
10,000 Tape & Reel
NTR1P02LT1/D
†
NTR1P02LT1
(V
DD
0 V, I
D
)
dIS/dt = 100 A/s)
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
A
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
= 0 V, ID = −10 A)
(V
GS
Zero Gate Voltage Drain Current
(VDS = −16 V, VGS = 0 V)
(V
= −16 V, VGS = 0 V, TJ = 125°C)
DS
Gate−Body Leakage Current (VGS = ± 12 V, VDS = 0 V) I
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V
= VGS, ID = −250 A)
DS
Static Drain−to−Source On−Resistance
(V
= −4.5 V, ID = −0.75 A)
GS
= −2.5 V, ID = −0.5 A)
(V
GS
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = −5.0 V) C
Output Capacitance (VDS = −5.0 V) C
Transfer Capacitance (VDG = −5.0 V) C
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = −5.0 V, ID = −1.0 A,
= −5.
= −1.0 A,
RL = 5.0 , RG = 6.0 )
Fall Time t
Total Gate Charge (VDS = −16 V, ID = −1.5 A,
VGS = −4.0 V)
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current I
Forward Voltage (Note 2) (VGS = 0 V, IS = −0.6 A) V
Reverse Recovery Time
(IS = −1.0 A, VGS = 0 V,
dI
/dt = 100 A/s
Reverse Recovery Stored Charge Q
1. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
V
(BR)DSS
I
DSS
GSS
V
GS(th)
r
DS(on)
t
d(on)
t
d(off)
Q
I
SM
t
t
t
iss
oss
rss
t
S
SD
rr
a
b
RR
−20 V
A
−1.0
−10
±100 nA
−0.7 −1.0 −1.25 V
0.135
0.190
225
0.22
0.35
pF
130
55
7.0
r
15
ns
18
f
T
20
5500 pC
−0.6 A
−0.75
−1.0 V
16
ns
11
5.5
0.0085 C
http://onsemi.com
2
Loading...