ON Semiconductor NTR1P02LT1 Technical data

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NTR1P02LT1

Power MOSFET

−20 V, −1.3 A, P−Channel
SOT−23 Package

These miniature surface mount MOSFETs low R

DS(on)

assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.

Features

• Low R

Provides Higher Efficiency and Extends Battery Life

DS(on)

• Miniature SOT−23 Surface Mount Package Saves Board Space

• Pb−Free Package is Available

MAXIMUM RATINGS (T

Drain−to−Source Voltage V
Gate−to−Source Voltage − Continuous V

Drain Current

− Continuous @ T

− Pulsed Drain Current (t
Total Power Dissipation @ TA = 25°C P
Operating and Storage Temperature Range TJ, T

Thermal Resistance − Junction−to−Ambient R
Maximum Lead Temperature for Soldering

Purposes, (1/8″ from case for 10 s)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.

= 25°C unless otherwise noted)

J

Rating

= 25°C

A

≤ 10 s)

p

Symbol Value Unit

stg

−20 V
±12 V

−1.3

−4.0
400 mW

− 55 to
150

300 °C/W
260 °C

A
A

°C

DSS

I

I

DM

T

GS

D



D

JA
L

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R

(BR)DSS

−20 V 220 m

DS(on)

P−Channel

G

MARKING DIAGRAM/

PIN ASSIGNMENT

3

1

2

SOT−23
CASE 318
STYLE 21

Gate2Source

PO2 = Specific Device Code
W = Work Week

MAX

D

S

PO2W

1

3

Drain

ID MAXV

−1.3 A

 Semiconductor Components Industries, LLC, 2004

July, 2004 − Rev. 5

ORDERING INFORMATION

Device Package Shipping

NTR1P02L T1 SOT−23 3000 Tape & Reel
NTR1P02LT1G SOT−23

(Pb−Free)

NTR1P02L T3 SOT−23 10,000 Tape & Reel
NTR1P02LT3G SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.

1 Publication Order Number:

3000 Tape & Reel

10,000 Tape & Reel

NTR1P02LT1/D

†

NTR1P02LT1

(V

DD

0 V, I

D

)

dIS/dt = 100 A/s)

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, ID = −10 A)

(V

GS

Zero Gate Voltage Drain Current

(VDS = −16 V, VGS = 0 V)
(V

= −16 V, VGS = 0 V, TJ = 125°C)

DS

Gate−Body Leakage Current (VGS = ± 12 V, VDS = 0 V) I

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(V

= VGS, ID = −250 A)

DS

Static Drain−to−Source On−Resistance

(V

= −4.5 V, ID = −0.75 A)

GS

= −2.5 V, ID = −0.5 A)

(V

GS

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = −5.0 V) C
Output Capacitance (VDS = −5.0 V) C
Transfer Capacitance (VDG = −5.0 V) C

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time
Rise Time
Turn−Off Delay Time

(VDD = −5.0 V, ID = −1.0 A,

= −5.

= −1.0 A,

RL = 5.0 , RG = 6.0 )

Fall Time t
Total Gate Charge (VDS = −16 V, ID = −1.5 A,

VGS = −4.0 V)

SOURCE−DRAIN DIODE CHARACTERISTICS

Continuous Current
Pulsed Current I
Forward Voltage (Note 2) (VGS = 0 V, IS = −0.6 A) V
Reverse Recovery Time

(IS = −1.0 A, VGS = 0 V,

dI

/dt = 100 A/s

Reverse Recovery Stored Charge Q

1. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

V

(BR)DSS

I

DSS

GSS

V

GS(th)

r

DS(on)

t

d(on)

t

d(off)

Q

I

SM

t
t
t

iss

oss

rss

t

S

SD

rr
a
b

RR

−20 V

A

−1.0

−10

±100 nA

−0.7 −1.0 −1.25 V



0.135

0.190

225

0.22

0.35

pF

130

55

7.0

r

15

ns

18

f

T

20

5500 pC

−0.6 A

−0.75

−1.0 V

16

ns

11

5.5

0.0085 C

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2

NTR1P02LT1

2.5

2

VGS = −3 V

−2.8 V

−2.6 V

1.5

−2.4 V

−2.2 V

1

, DRAIN CURRENT (AMPS)

0.5

D

−I

0

0

−V

, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

DS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

0.04
ID = −10 A

T

= 25°C

0.03

0.02

J

21

−1.2 V

−2 V

3

1.4
VDS ≥ −10 V

TJ = 25°C

1.2

1

−1.8 V

0.8

−1.6 V

0.6

0.4

, DRAIN CURRENT (AMPS)

−1.4 V

4 1.6 1.8 2 2.2

D

−I

0.2

0

5

1 2.41.41.2

TJ = 25°C

TJ = 100°C

TJ = −55°C

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.3

TJ = 25°C
V

= −2.5 V

0.25

0.2

0.15

GS

TJ = 100°C

TJ = 25°C

0.01

, DRAIN−TO−SOURCE RESISTANCE ()

0

DS(on)

0

R

42

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) −ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus

Gate−to−Source V oltage

0.3
ID = −0.5 A

V

= −2.5 V

GS

0.2

0.1

(NORMALIZED)

, DRAIN−TO−SOURCE RESISTANCE

0

DS(on)

R

−50 50250−25 75 125100
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0.1

0.05

, DRAIN−TO−SOURCE RESISTANCE ()

0

610

8 0.9

0.2 0.50.40.3 0.6 0.7 10.8

DS(on)

R

Figure 4. On−Resistance versus Drain Current

1000

VGS = 0 V

100

10

, LEAKAGE (nA)

1

DSS

−I

0.1

0.01

150

412816

TJ = −55°C

and Gate Voltage

TJ = 125°C

TJ = 100°C

TJ = 25°C

Figure 5. On−Resistance Variation with

Temperature

http://onsemi.com

Figure 6. Drain−to−Source Leakage Current

versus V oltage

3

NTR1P02LT1

5000
4500
4000

3500

VDS = 0V

VGS = 0V
T

= 25°C

J

6

Q

4

T

3000

DS

10

C

iss

Q

2

C

oss

C

rss

1550

, GATE−TO−SOURCE VOLTAGE (VOLTS)

GS

0

−V

25 0 21

1

Q

2

VDS = −16 V
I

= −1.5 A

D

= 25°C

T

J

34

QG, TOTAL GATE CHARGE (nC)

2500
2000
1500

C, CAPACITANCE (pF)

1000

500

0

15

10 20

5

−V

GS

−V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

100

VDD = −16 V
I

= −1 A

D

t

r

t

f

10

t

d(off)

t, TIME (ns)

1

t

d(on)

1 10 100 1.00E−01 5.00E−013.00E−01 7.00E−01 9.00E−01

RG, GATE RESISTANCE ()−V

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

0.8
VGS = 0 V

T

= 25°C

J

0.6

0.4

0.2

, SOURCE CURRENT (AMPS)

S

−I
0

, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

SD

Figure 10. Diode Forward Voltage versus

Current

28

24
20

16
12

8

4
0

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4

NTR1P02LT1

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−09

ISSUE AJ

NOTES:

A

L

3

1

V

G

BS

2

C

D

H

J

K

SOLDERING FOOTPRINT*

0.95

0.95

0.037

0.037

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.

4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.

DIMAMIN MAX MIN MAX

STYLE 21:

INCHES

0.1102 0.1197 2.80 3.04

B 0.0472 0.0551 1.20 1.40
C 0.0385 0.0498 0.99 1.26
D 0.0140 0.0200 0.36 0.50
G 0.0670 0.0826 1.70 2.10
H 0.0040 0.0098 0.10 0.25

J 0.0034 0.0070 0.085 0.177

K 0.0180 0.0236 0.45 0.60

L 0.0350 0.0401 0.89 1.02
S 0.0830 0.0984 2.10 2.50
V 0.0177 0.0236 0.45 0.60

PIN 1. GATE

2. SOURCE

3. DRAIN

MILLIMETERS

2.0

0.079

0.9

0.035

0.8

0.031

SCALE 10:1



inches

mm



*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

5

NTR1P02LT1

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTR1P02LT1/D

6